¢Æ Te_K_singlecrystal_D3L6ÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.066
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T(K) K[x102W/(mK)]
2.89 8.939
3.39 8.331
3.84 8.939
5.11 7.237
6.72 4.682
8.54 3.541
9.35 2.792
T(K) K[x102W/(mK)]
11.34 2.29
13 1.732
21.48 0.697
27.3 0.484
57.24 0.176
83.33 0.121
¢Æ Te_K_singlecrystal_D3L6ÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : rod(3 mm dia, 6 cm length)
±¸Á¶ : Single crysta
¹Ðµµ : 6 g/cm3
¼ººÐºÐ¼® : Àοë
ºÒ¼ø¹° : 99.99 %
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2 K - 70 K
½ÇÇè¹æ¹ý : steady-state method
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : normal
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 10 %(ÃßÁ¤¿ÀÂ÷)
¢Æ Te_K_singlecrystal_D3L6ÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Fischer, et. al., Physical Review 106, 480 (1957)


¢Æ Te_K_singlecrystal_D3L5ÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.065
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T(K) K[x102W/(mK)]
1.96 0.706
2.38 0.936
2.69 1.171
3.23 1.683
3.75 1.994
4.35 2.326
6.41 2.911
9.12 2.425
T(K) K[x102W/(mK)]
11.86 1.859
16.13 1.153
20.99 0.717
24.87 0.557
29.22 0.445
63.38 0.153
75.25 0.132
¢Æ Te_K_singlecrystal_D3L5ÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : rod(3 mm dia, 5 cm length)
±¸Á¶ : Single crystal
¹Ðµµ : 6 g/cm3
¼ººÐºÐ¼® : Àοë
ºÒ¼ø¹° : 99.99 %
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2 K - 70 K
½ÇÇè¹æ¹ý : steady-state method
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : fair
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 2.5 %(ÃßÁ¤)
¢Æ Te_K_singlecrystal_D3L5ÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Fischer, et. al., Physical Review 106, 480 (1957)


¢Æ Te_K_Polycrystal_D3L4ÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.064
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T(K) K[x102W/(mK)]
1.91 0.563
2.12 0.689
2.37 0.859
2.8 1.102
3.23 1.416
3.71 1.765
4.32 2.063
6.01 2.526
6.92 2.566
7.95 2.777
8.05 2.488
9.51 2.263
10.8 1.848
T(K) K[x102W/(mK)]
12.11 1.533
14.1 1.068
17.96 0.859
21.44 0.628
25.33 0.425
31.4 0.352
54.3 0.166
64.84 0.144
65.77 0.131
71.8 0.138
78.53 0.125
83.76 0.111
92.59 0.102
¢Æ Te_K_Polycrystal_D3L4ÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : rod(3 mm dia, 4 cm length)
±¸Á¶ : polycrystal
¹Ðµµ : 6 g/cm3
¼ººÐºÐ¼® : Àοë
ºÒ¼ø¹° : 99.99 %
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2 K - 70 K
½ÇÇè¹æ¹ý : steady-state method
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : normal
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 6 %(ÃßÁ¤¿ÀÂ÷)
¢Æ Te_K_Polycrystal_D3L4ÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Fischer, et. al., Physical Review 106, 480 (1957)


¢Æ Te_K_PolycrystalD5L1.5ÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.063
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T(K) K[x102W/(mK)]
1.97 0.002
2.52 0.003
3.24 0.005
4.15 0.009
6.2 0.019
10.06 0.03
T(K) K[x102W/(mK)]
13.27 0.032
16.79 0.033
20.4 0.029
22.14 0.029
30.04 0.026
78.04 0.013
10.8 1.848
12.11 1.533
14.1 1.068
17.96 0.859
21.44 0.628
25.33 0.425
31.4 0.352
54.3 0.166
64.84 0.144
65.77 0.131
71.8 0.138
78.53 0.125
83.76 0.111
92.59 0.102
¢Æ Te_K_PolycrystalD5L1.5ÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : rod(5 mm dia, 1.5 cm length)
±¸Á¶ : polycrystal
¹Ðµµ : 6 g/cm3
¼ººÐºÐ¼® : Àοë
ºÒ¼ø¹° : 99.50 %
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2 K - 70 K
½ÇÇè¹æ¹ý : steady-state method
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : normal
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 2.5 % (ÃßÁ¤)
¢Æ Te_K_PolycrystalD5L1.5ÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Fischer, et. al., Physical Review 106, 480 (1957)


¢Æ Te_Cp_563K760KÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.062
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T(K) Cp[J/g-1K-1]
563.61 0.229
595.87 0.233
632.97 0.237
651.22 0.245
686.93 0.248
T(K) Cp[J/g-1K-1]
721.26 0.26
750.76 0.27
757.07 0.286
760.52 0.295
22.14 0.029
30.04 0.026
78.04 0.013
10.8 1.848
12.11 1.533
14.1 1.068
17.96 0.859
21.44 0.628
25.33 0.425
31.4 0.352
54.3 0.166
64.84 0.144
65.77 0.131
71.8 0.138
78.53 0.125
83.76 0.111
92.59 0.102
¢Æ Te_Cp_563K760KÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : Àοë
±¸Á¶ : polycrystal
¹Ðµµ : 6 g/cm3
¼ººÐºÐ¼® : liquid allorys
ºÒ¼ø¹° : 99.99 %
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 563K -760 K
½ÇÇè¹æ¹ý : adiabatic calorimeter
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : none
½Ã·áÁ¦Á¶¹ý : none
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 5 %
¢Æ Te_Cp_563K760KÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Takeda, et.al., J. Phys. C: Solid State Phys. v15, 5203 (1982)


¢Æ Te_Cp_1.5K20K99.99 %ÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.061
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T(K) Cp[J/g-1K-1]
1.5 1.46552E-5
2 3.55799E-5
3 0.000126176
4 0.000317398
5 0.000659875
6 0.00121
7 0.00205
8 0.00322
9 0.00475
10 0.00665
T(K) Cp[J/g-1K-1]
11 0.00886
12 0.01129
13 0.01387
14 0.01654
15 0.01936
16 0.02234
17 0.02539
18 0.02923
19 0.03174
20 0.0348
64.84 0.144
65.77 0.131
71.8 0.138
78.53 0.125
83.76 0.111
92.59 0.102
¢Æ Te_Cp_1.5K20K99.99 %ÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : rod(1.3 cm dia, 7 cm length)
±¸Á¶ : polycrystal
¹Ðµµ : 6 g/cm3
¼ººÐºÐ¼® : Àοë
ºÒ¼ø¹° : 99.99 %
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 1.5 K - 20 K
½ÇÇè¹æ¹ý : adiabatic calorimeter
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : none
½Ã·áÁ¦Á¶¹ý : none
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 1 %(ÃßÁ¤¿ÀÂ÷)
¢Æ Te_Cp_1.5K20K99.99 %ÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Leadbetter, et.al., J. Phys. C: Solid State Phys. v6. 1546(1973).


¢Æ Te_Cp_14K301K99.8 %ÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.060
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T(K) Cp[J/g-1K-1]
14.22 0.018
15.4 0.021
19.35 0.033
23.39 0.046
26.91 0.057
30.21 0.067
34.04 0.077
38.32 0.09
42.41 0.1
46.82 0.11
51.75 0.12
57.71 0.131
64.42 0.139
104.75 0.172
117.25 0.179
127.15 0.181
137.04 0.183
147.38 0.185
T(K) Cp[J/g-1K-1]
157.85 0.189
168.48 0.19
178.48 0.191
188.95 0.192
200.44 0.194
212.1 0.195
218.34 0.195
223.71 0.196
228.62 0.196
239.8 0.199
250.12 0.202
258.28 0.2
259.64 0.199
267.09 0.201
278.75 0.201
289.8 0.202
301.27 0.202
¢Æ Te_Cp_14K301K99.8 %ÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : Àοë
±¸Á¶ : polycrystal (40)
¹Ðµµ : 6 g/cm3
¼ººÐºÐ¼® : 0,2 %Se
ºÒ¼ø¹° : 99.80 %
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 14 K - 301 K
½ÇÇè¹æ¹ý : adiabatic calorimeter
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : normal
½Ã·áÁ¦Á¶¹ý : normal
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 10 %(ÃßÁ¤¿ÀÂ÷)
¢Æ Te_Cp_14K301K99.8 %ÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Slansky, et.al., J. Am. Ceram. Soc. 61, 564 (1939)


¢Æ Te_Cp_54K292KSe0.2 %ÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.059
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T(K) Cp[J/g-1K-1]
54 0.12223
57.6 0.12725
61.8 0.13311
67.4 0.14232
72.3 0.14902
76 0.15363
84.9 0.15991
95.1 0.16786
101.8 0.16995
111.6 0.17414
119.5 0.17665
T(K) Cp[J/g-1K-1]
128.5 0.17958
147.9 0.18544
164.4 0.18837
178.4 0.19214
189.4 0.19256
198 0.19297
211.8 0.19339
229.5 0.19674
250.3 0.198
272.6 0.19758
292 0.19842
200.44 0.194
212.1 0.195
218.34 0.195
223.71 0.196
228.62 0.196
239.8 0.199
250.12 0.202
258.28 0.2
259.64 0.199
267.09 0.201
278.75 0.201
289.8 0.202
301.27 0.202
¢Æ Te_Cp_54K292KSe0.2 %ÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : Àοë
±¸Á¶ : polycrystal
¹Ðµµ : 6 g/cm3
¼ººÐºÐ¼® : 0.2 % Se
ºÒ¼ø¹° : 99.80 %
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 54 K - 292 K
½ÇÇè¹æ¹ý : adiabatic calorimeter
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : normal
½Ã·áÁ¦Á¶¹ý : normal
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 2 %(ÃßÁ¤¿ÀÂ÷)
¢Æ Te_Cp_54K292KSe0.2 %ÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Anderson, J. Am. Ceram. Soc. 59, 1036 (1937)


¢Æ Sb_K_singlecrystal_RRR9000ÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.058
ÂüÁ¶Ç¥ÁØ µî±Þ °ËÁõ ÂüÁ¶Ç¥ÁØ
T(K) K[10-1W/(mK)]
0.51 0.557
0.59 0.791
0.71 1.114
0.73 1.515
0.93 1.915
1.21 3.518
1.41 4.631
T(K) K[10-1W/(mK)]
1.59 6.146
1.68 7.348
1.77 7.27
1.78 7.504
2 12.546
2.27 20.138
2.45 31.404
178.4 0.19214
189.4 0.19256
198 0.19297
211.8 0.19339
229.5 0.19674
250.3 0.198
272.6 0.19758
292 0.19842
200.44 0.194
212.1 0.195
218.34 0.195
223.71 0.196
228.62 0.196
239.8 0.199
250.12 0.202
258.28 0.2
259.64 0.199
267.09 0.201
278.75 0.201
289.8 0.202
301.27 0.202
¢Æ Sb_K_singlecrystal_RRR9000ÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 20x4.6x2 mm^3
±¸Á¶ : single crystal (trigonal [111])
¹Ðµµ : 6.67 g/cm^3
¼ººÐºÐ¼® : ¸¸Á·
ºÒ¼ø¹° : RRR900
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 0.4 K - 2.4 K
½ÇÇè¹æ¹ý : Steady state technique
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : necessary
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ none
¢Æ Sb_K_singlecrystal_RRR9000ÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Blewer, et.al., Phys. Rev. 174, 700 (1968).


¢Æ Sb_Cp_2.1K49.71Ksingle99.9999 %ÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.057
ÂüÁ¶Ç¥ÁØ µî±Þ °ËÁõ ÂüÁ¶Ç¥ÁØ
T(K) Cp[J/g-1K-1]
2.10419 1.8226E-5
3.04392 5.69966E-5
3.91216 0.000126772
4.7191 0.000230135
5.21961 0.000322844
6.01634 0.000522535
6.82329 0.000814392
7.90603 0.00139
9.07048 0.00228
10.15322 0.00344
11.61389 0.00547
12.55363 0.0071
13.86108 0.00969
14.94382 0.01212
16.17978 0.01511
17.41573 0.01842
18.79469 0.02213
T(K) Cp[J/g-1K-1]
20.38815 0.02647
21.83861 0.03078
23.29928 0.03482
24.67824 0.03896
25.83248 0.04234
27.50766 0.04742
29.82635 0.05404
31.49132 0.05858
33.3095 0.06396
35.34219 0.07
37.44637 0.07588
39.98979 0.08314
42.16547 0.08846
43.83044 0.09191
46.08784 0.09651
48.77426 0.10324
49.71399 0.10638
301.27 0.202
¢Æ Sb_Cp_2.1K49.71Ksingle99.9999 %ÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : small crystal
±¸Á¶ : crystal
¹Ðµµ : 6.67 g/cm^3
¼ººÐºÐ¼® : ¸¸Á·
ºÒ¼ø¹° : ¸¸Á·
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2.10-49.71 K
½ÇÇè¹æ¹ý : relaxation method
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ none
¢Æ Sb_Cp_2.1K49.71Ksingle99.9999 %ÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Serrano, et.al., Phys. Rev. B 77, 054303 (2008)


¢Æ Sb_Cp_0.04K0.76Kpoly99.9999 %ÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.056
ÂüÁ¶Ç¥ÁØ µî±Þ °ËÁõ ÂüÁ¶Ç¥ÁØ
T(K) Cp[J/g-1K-1]
0.0396 2.42608E-5
0.0411 2.24212E-5
0.0421 2.13863E-5
0.0428 2.07129E-5
0.0455 1.83147E-5
0.0471 1.70253E-5
0.048 1.66393E-5
0.0482 1.63108E-5
0.05 1.50788E-5
0.0507 1.46764E-5
0.0511 1.45204E-5
0.0546 1.26068E-5
0.056 1.19251E-5
0.0566 1.18512E-5
0.0568 1.17034E-5
0.0575 1.1498E-5
0.0595 1.06521E-5
0.0596 1.0841E-5
0.0603 1.04468E-5
0.0611 1.01265E-5
0.0638 9.41196E-6
0.0653 8.78778E-6
0.0659 8.65637E-6
0.0666 8.55782E-6
0.0668 8.36071E-6
0.0687 8.03302E-6
0.0727 7.16081E-6
0.0729 7.05404E-6
0.0734 7.00641E-6
0.0768 6.47011E-6
0.0771 6.443E-6
0.0785 6.12681E-6
0.079 6.07342E-6
0.0844 5.32441E-6
0.0878 4.93265E-6
0.0899 4.66902E-6
0.0907 4.6066E-6
0.0939 4.31422E-6
0.0992 3.88305E-6
0.1001 3.80585E-6
0.1011 3.78614E-6
0.1027 3.66459E-6
0.1028 3.64898E-6
0.1034 3.65966E-6
0.1036 3.56603E-6
0.112 3.14471E-6
0.1121 3.11597E-6
0.1133 3.07983E-6
0.1134 3.0634E-6
0.1158 2.96567E-6
0.1208 2.71846E-6
0.1229 2.58706E-6
0.1229 2.59609E-6
0.1316 2.32014E-6
0.1353 2.18298E-6
0.1441 1.93085E-6
0.155 1.69432E-6
0.1637 1.56127E-6
0.1763 1.38305E-6
T(K) Cp[J/g-1K-1]
0.1789 1.37073E-6
0.1915 1.22536E-6
0.1938 1.21633E-6
0.206 1.11038E-6
0.2246 9.78975E-7
0.2333 9.44481E-7
0.2397 9.15736E-7
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ Sb_Cp_0.04K0.76Kpoly99.9999 %ÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : ingots
±¸Á¶ : crystal
¹Ðµµ : 6.67 g/cm^3
¼ººÐºÐ¼® : ¸¸Á·
ºÒ¼ø¹° : ¸¸Á·
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 0.0396 K ~ 0.7848 K
½ÇÇè¹æ¹ý : adiabatic calorimeter
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : necessary
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 0.20 %
¢Æ Sb_Cp_0.04K0.76Kpoly99.9999 %ÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Collan, et.al., Phys. Rev. B 1, 2888 (1970)


¢Æ Sb_Cp_0.57K4KÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.055
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T(K) Cp[J/g-1K-1]
0.58 9.609E-7
0.61 1.013E-6
0.61 1.038E-6
0.63 1.078E-6
0.66 1.155E-6
0.69 1.242E-6
0.7 1.292E-6
0.73 1.36E-6
0.73 1.386E-6
0.75 1.432E-6
0.78 1.491E-6
0.8 1.64E-6
0.82 1.716E-6
0.83 1.782E-6
0.85 1.831E-6
0.88 1.979E-6
0.89 2.037E-6
0.92 2.16E-6
0.93 2.259E-6
0.96 2.398E-6
0.97 2.48E-6
0.98 2.505E-6
1.02 2.76E-6
1.03 2.85E-6
1.06 2.998E-6
1.15 3.679E-6
1.17 3.876E-6
1.24 4.419E-6
1.25 4.46E-6
1.28 4.805E-6
1.33 5.273E-6
1.34 5.453E-6
1.41 6.299E-6
T(K) Cp[J/g-1K-1]
1.46 6.997E-6
1.48 7.162E-6
1.49 7.359E-6
1.57 8.328E-6
1.57 8.303E-6
1.62 8.985E-6
1.68 1.018E-5
1.72 1.064E-5
1.77 1.155E-5
1.8 1.187E-5
1.85 1.302E-5
1.91 1.422E-5
1.97 1.561E-5
2.03 1.7E-5
2.17 2.061E-5
2.25 2.3E-5
2.33 2.505E-5
2.45 2.981E-5
2.64 3.753E-5
2.78 4.427E-5
2.82 4.599E-5
2.84 4.681E-5
2.95 5.289E-5
2.97 5.371E-5
3.1 6.11E-5
3.15 6.431E-5
3.33 7.687E-5
3.35 7.86E-5
3.54 9.305E-5
3.61 9.905E-5
3.71 0.0001088
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ Sb_Cp_0.57K4KÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : ingots
±¸Á¶ : crystal
¹Ðµµ : 6.67 g/cm^3
¼ººÐºÐ¼® : ¸¸Á·
ºÒ¼ø¹° : ¸¸Á·
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 0.57 K - 4.01 K
½ÇÇè¹æ¹ý : adiabatic calorimeter
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : necessary
½Ã·áÁ¦Á¶¹ý : necessary
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 0.50 %
¢Æ Sb_Cp_0.57K4KÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] McCollum, et.al., Phys. Rev. 156, 782 (1967).


¢Æ Sb_Cp_0.47K4KCu5ppmÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.054
ÂüÁ¶Ç¥ÁØ µî±Þ °ËÁõ ÂüÁ¶Ç¥ÁØ
T(K) Cp[J/g-1K-1]
0.45 7.227E-7
0.48 7.474E-7
0.5 7.72E-7
0.53 8.377E-7
0.53 8.459E-7
0.57 9.363E-7
0.59 9.691E-7
0.63 1.068E-6
0.64 1.101E-6
0.67 1.191E-6
0.7 1.257E-6
0.7 1.224E-6
0.72 1.421E-6
0.75 1.421E-6
0.75 1.503E-6
0.79 1.643E-6
0.81 1.716E-6
0.81 1.741E-6
0.83 1.758E-6
0.85 1.873E-6
0.88 1.996E-6
0.9 2.078E-6
0.9 2.119E-6
0.91 2.144E-6
0.97 2.456E-6
0.98 2.53E-6
0.99 2.595E-6
1.08 3.121E-6
1.08 3.137E-6
1.17 3.811E-6
T(K) Cp[J/g-1K-1]
1.19 4.016E-6
1.27 4.681E-6
1.31 5.149E-6
1.39 5.979E-6
1.42 6.258E-6
1.47 6.948E-6
1.54 7.868E-6
1.63 9.182E-6
1.69 1.004E-5
1.81 1.215E-5
1.84 1.288E-5
2.02 1.663E-5
2.09 1.842E-5
2.19 2.122E-5
2.23 2.218E-5
2.4 2.785E-5
2.43 2.866E-5
2.63 3.683E-5
2.68 3.911E-5
2.86 4.773E-5
2.92 5.056E-5
3.09 6.045E-5
3.16 6.503E-5
3.32 7.648E-5
3.47 8.702E-5
3.6 9.834E-5
3.77 0.0001141
3.88 0.0001252
4.01 0.0001413
3.33 7.687E-5
3.35 7.86E-5
3.54 9.305E-5
3.61 9.905E-5
3.71 0.0001088
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ Sb_Cp_0.47K4KCu5ppmÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : ingots
±¸Á¶ : crystal
¹Ðµµ : 6.67 g/cm^3
¼ººÐºÐ¼® : ¸¸Á·
ºÒ¼ø¹° : 100.00 %
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 0.47 K - 4.0 K
½ÇÇè¹æ¹ý : adiabatic calorimeter
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 0.60 %
¢Æ Sb_Cp_0.47K4KCu5ppmÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] *Cullbert, Phys. Rev. 157, 157 (1967)


¢Æ As_K_RRR5310ÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.053
ÂüÁ¶Ç¥ÁØ µî±Þ °ËÁõ ÂüÁ¶Ç¥ÁØ
Total§ãPhonon§ãElectron
T(K) K[x10-2W/(mK)]
3.75 7.085
4.25 7.104
4.65 6.833
4.72 6.508
4.9 6.453
5.09 6.38
5.03 6.145
5.78 5.711
6.25 5.532
6.17 5.458
7.1 5.242
8.17 4.537
8.61 4.301
9.53 4.103
10.18 3.994
11.12 3.742
11.87 3.652
12.48 3.544
13.48 3.471
13.66 3.327
T(K) K[x10-2W/(mK)]
15.12 3.072
15.51 3.002
16.97 2.712
19.05 2.386
20.06 2.223
21.66 2.08
23.08 1.917
24.31 1.771
26.92 1.608
29.46 1.41
31.82 1.283
35.23 1.12
38.05 1.049
41.64 0.957
59.55 0.705
86.45 0.542
126.97 0.434
157.79 0.415
256.64 0.361
1.81 1.215E-5
1.84 1.288E-5
2.02 1.663E-5
2.09 1.842E-5
2.19 2.122E-5
2.23 2.218E-5
2.4 2.785E-5
2.43 2.866E-5
2.63 3.683E-5
2.68 3.911E-5
2.86 4.773E-5
2.92 5.056E-5
3.09 6.045E-5
3.16 6.503E-5
3.32 7.648E-5
3.47 8.702E-5
3.6 9.834E-5
3.77 0.0001141
3.88 0.0001252
4.01 0.0001413
3.33 7.687E-5
3.35 7.86E-5
3.54 9.305E-5
3.61 9.905E-5
3.71 0.0001088
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6

T(K) K[x10-2W/(mK)]
2.02 0.003
2.16 0.004
2.43 0.005
2.55 0.005
2.91 0.007
3.06 0.008
3.15 0.008
3.39 0.01
3.52 0.011
3.79 0.013
4.43 0.019
4.8 0.024
5.45 0.034
5.71 0.043
6.19 0.057
6.48 0.063
7.3 0.103
T(K) K[x10-2W/(mK)]
8.22 0.157
9.41 0.263
9.87 0.307
10.93 0.442
12.82 0.675
13.86 0.778
15.5 0.865
16.89 0.895
18.15 0.916
19.5 0.906
22.47 0.845
24.73 0.806
26.74 0.769
30.38 0.691
33.64 0.622
43.01 0.497
60.49 0.37
59.55 0.705
86.45 0.542
126.97 0.434
157.79 0.415
256.64 0.361
1.81 1.215E-5
1.84 1.288E-5
2.02 1.663E-5
2.09 1.842E-5
2.19 2.122E-5
2.23 2.218E-5
2.4 2.785E-5
2.43 2.866E-5
2.63 3.683E-5
2.68 3.911E-5
2.86 4.773E-5
2.92 5.056E-5
3.09 6.045E-5
3.16 6.503E-5
3.32 7.648E-5
3.47 8.702E-5
3.6 9.834E-5
3.77 0.0001141
3.88 0.0001252
4.01 0.0001413
3.33 7.687E-5
3.35 7.86E-5
3.54 9.305E-5
3.61 9.905E-5
3.71 0.0001088
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6

T(K) K[x10-2W/(mK)]
3.23 7.58
3.81 7
4.23 7.148
5.01 6.4
6.19 5.467
7.22 5.15
8.38 4.436
8.86 4.103
9.82 3.865
10.78 3.396
11.85 3.019
T(K) K[x10-2W/(mK)]
14.83 2.288
17.4 1.823
19.1 1.524
20.41 1.382
21.59 1.226
23.08 1.132
24.37 0.997
30.02 0.705
33.88 0.596
41.06 0.479
54.92 0.326
13.86 0.778
15.5 0.865
16.89 0.895
18.15 0.916
19.5 0.906
22.47 0.845
24.73 0.806
26.74 0.769
30.38 0.691
33.64 0.622
43.01 0.497
60.49 0.37
59.55 0.705
86.45 0.542
126.97 0.434
157.79 0.415
256.64 0.361
1.81 1.215E-5
1.84 1.288E-5
2.02 1.663E-5
2.09 1.842E-5
2.19 2.122E-5
2.23 2.218E-5
2.4 2.785E-5
2.43 2.866E-5
2.63 3.683E-5
2.68 3.911E-5
2.86 4.773E-5
2.92 5.056E-5
3.09 6.045E-5
3.16 6.503E-5
3.32 7.648E-5
3.47 8.702E-5
3.6 9.834E-5
3.77 0.0001141
3.88 0.0001252
4.01 0.0001413
3.33 7.687E-5
3.35 7.86E-5
3.54 9.305E-5
3.61 9.905E-5
3.71 0.0001088
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6

¢Æ As_K_RRR5310ÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 11.0X2.35X2.37(mm3)
±¸Á¶ : Single crystal (Trogonal direction)
¹Ðµµ : 5.48 g/cm^3
¼ººÐºÐ¼® : ¸¸Á·
ºÒ¼ø¹° : RRR5310
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2 K - 300 K
½ÇÇè¹æ¹ý : Steady state technique
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : necessary
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 2 % (300 K), 1 % (<77 K)
¢Æ As_K_RRR5310ÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Phys. Rev. B Vol. 28, p4242, (1983)


¢Æ As_K_RRR3670ÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.052
ÂüÁ¶Ç¥ÁØ µî±Þ °ËÁõ ÂüÁ¶Ç¥ÁØ
Total§ãPhonon§ãElectron
T(K) K[x10-2W/(mK)]
2.56 7.43
3.02 7.899
4.32 7.845
4.85 7.628
5.74 7.104
6.69 6.489
7.9 5.784
9.47 5.168
11.62 4.572
13.73 4.284
16.02 4.122
18.2 4.192
21.52 4.122
24.77 3.905
T(K) K[x10-2W/(mK)]
30.03 3.544
31.63 3.343
35.98 2.928
40.87 2.549
46.49 2.223
52.19 1.898
63.28 1.537
78.67 1.212
112.78 0.887
144.03 0.74
190.84 0.632
231.38 0.578
276.8 0.578
22.47 0.845
24.73 0.806
26.74 0.769
30.38 0.691
33.64 0.622
43.01 0.497
60.49 0.37
59.55 0.705
86.45 0.542
126.97 0.434
157.79 0.415
256.64 0.361
1.81 1.215E-5
1.84 1.288E-5
2.02 1.663E-5
2.09 1.842E-5
2.19 2.122E-5
2.23 2.218E-5
2.4 2.785E-5
2.43 2.866E-5
2.63 3.683E-5
2.68 3.911E-5
2.86 4.773E-5
2.92 5.056E-5
3.09 6.045E-5
3.16 6.503E-5
3.32 7.648E-5
3.47 8.702E-5
3.6 9.834E-5
3.77 0.0001141
3.88 0.0001252
4.01 0.0001413
3.33 7.687E-5
3.35 7.86E-5
3.54 9.305E-5
3.61 9.905E-5
3.71 0.0001088
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6

T(K) K[x10-2W/(mK)]
1.95 0.005
2.13 0.006
2.32 0.006
2.54 0.008
2.68 0.008
2.96 0.011
3.09 0.012
3.32 0.014
3.67 0.018
3.91 0.022
4.16 0.024
4.51 0.032
4.75 0.043
5.15 0.051
5.37 0.061
5.83 0.081
T(K) K[x10-2W/(mK)]
6.32 0.117
7.3 0.2
8.1 0.284
8.97 0.422
9.43 0.555
11.7 1.071
13.09 1.568
14.5 2.032
15.92 2.262
17.82 2.634
20.35 2.931
23.99 3.116
26.29 3.067
45.74 1.912
70.33 1.12
96.6 0.826
43.01 0.497
60.49 0.37
59.55 0.705
86.45 0.542
126.97 0.434
157.79 0.415
256.64 0.361
1.81 1.215E-5
1.84 1.288E-5
2.02 1.663E-5
2.09 1.842E-5
2.19 2.122E-5
2.23 2.218E-5
2.4 2.785E-5
2.43 2.866E-5
2.63 3.683E-5
2.68 3.911E-5
2.86 4.773E-5
2.92 5.056E-5
3.09 6.045E-5
3.16 6.503E-5
3.32 7.648E-5
3.47 8.702E-5
3.6 9.834E-5
3.77 0.0001141
3.88 0.0001252
4.01 0.0001413
3.33 7.687E-5
3.35 7.86E-5
3.54 9.305E-5
3.61 9.905E-5
3.71 0.0001088
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6

T(K) K[x10-2W/(mK)]
2.67 7.428
3.16 7.872
4 7.872
4.48 7.794
4.91 7.577
5.6 7.281
6.04 6.927
7.01 6.27
7.78 5.799
8.3 5.517
8.95 4.994
9.92 4.565
11.2 3.822
12.07 3.357
13.26 2.896
14.15 2.569
T(K) K[x10-2W/(mK)]
15.25 2.261
15.69 1.966
16.92 1.679
19.64 1.378
20.98 1.152
22.2 0.945
25.05 0.799
26.01 0.881
27.78 0.723
30.52 0.635
37.14 0.45
44.77 0.365
54.05 0.291
82.31 0.164
96.6 0.129
96.6 0.826
43.01 0.497
60.49 0.37
59.55 0.705
86.45 0.542
126.97 0.434
157.79 0.415
256.64 0.361
1.81 1.215E-5
1.84 1.288E-5
2.02 1.663E-5
2.09 1.842E-5
2.19 2.122E-5
2.23 2.218E-5
2.4 2.785E-5
2.43 2.866E-5
2.63 3.683E-5
2.68 3.911E-5
2.86 4.773E-5
2.92 5.056E-5
3.09 6.045E-5
3.16 6.503E-5
3.32 7.648E-5
3.47 8.702E-5
3.6 9.834E-5
3.77 0.0001141
3.88 0.0001252
4.01 0.0001413
3.33 7.687E-5
3.35 7.86E-5
3.54 9.305E-5
3.61 9.905E-5
3.71 0.0001088
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6

¢Æ As_K_RRR3670ÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 22.1X3.0X1.05(mm3)
±¸Á¶ : Single crystal (Binaryl direction)
¹Ðµµ : 5.48 g/cm^3
¼ººÐºÐ¼® : ¸¸Á·
ºÒ¼ø¹° : RRR3670
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2 K - 300 K
½ÇÇè¹æ¹ý : Steady state technique
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : necessary
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 2 % (300 K), 1 % (<77 K)
¢Æ As_K_RRR3670ÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Phys. Rev. B Vol. 28, p4242, (1983)


¢Æ As_K_RRR1450ÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.051
ÂüÁ¶Ç¥ÁØ µî±Þ °ËÁõ ÂüÁ¶Ç¥ÁØ
Total§ãPhonon§ãElectron
T(K) K[x10-2W/(mK)]
3.59 1.78
3.9 1.73
4.19 1.846
5.01 2.165
5.58 2.233
5.85 2.366
6.43 2.434
6.82 2.434
7.33 2.434
7.79 2.385
8.36 2.349
8.88 2.333
9.53 2.3
10.37 2.3
11.41 2.333
12.7 2.316
14.31 2.333
15.38 2.3
17.95 2.132
19.29 2.049
21.19 1.931
21.73 1.981
T(K) K[x10-2W/(mK)]
23.05 1.813
25.36 1.711
26.58 1.595
27.91 1.543
31.81 1.26
33.34 1.208
36.26 1.108
38.52 1.04
44.43 0.924
51.85 0.773
59.9 0.671
68.28 0.622
76.93 0.586
88.72 0.52
94.25 0.503
106.18 0.47
121.04 0.454
144.61 0.418
183.54 0.385
204.35 0.385
233.33 0.352
278.78 0.369
2.23 2.218E-5
2.4 2.785E-5
2.43 2.866E-5
2.63 3.683E-5
2.68 3.911E-5
2.86 4.773E-5
2.92 5.056E-5
3.09 6.045E-5
3.16 6.503E-5
3.32 7.648E-5
3.47 8.702E-5
3.6 9.834E-5
3.77 0.0001141
3.88 0.0001252
4.01 0.0001413
3.33 7.687E-5
3.35 7.86E-5
3.54 9.305E-5
3.61 9.905E-5
3.71 0.0001088
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6

T(K) K[x10-2W/(mK)]
1.94 0.003
2.31 0.004
2.84 0.006
3.11 0.008
3.34 0.009
3.52 0.01
3.63 0.011
3.74 0.012
3.97 0.014
4.32 0.017
4.68 0.021
5.24 0.029
5.51 0.033
5.75 0.038
5.92 0.041
6.5 0.056
6.91 0.064
7.34 0.08
8.56 0.13
8.92 0.15
9.4 0.174
T(K) K[x10-2W/(mK)]
10.09 0.212
11.06 0.288
11.18 0.311
12.38 0.409
12.51 0.448
13.71 0.53
15.65 0.667
15.51 0.698
18.25 0.765
19.02 0.905
19.82 0.802
20.43 0.878
21.71 0.826
23.83 0.789
25.59 0.777
29.53 0.687
32.06 0.648
34.44 0.609
42.24 0.515
51.33 0.442
68.35 0.336
233.33 0.352
278.78 0.369
2.23 2.218E-5
2.4 2.785E-5
2.43 2.866E-5
2.63 3.683E-5
2.68 3.911E-5
2.86 4.773E-5
2.92 5.056E-5
3.09 6.045E-5
3.16 6.503E-5
3.32 7.648E-5
3.47 8.702E-5
3.6 9.834E-5
3.77 0.0001141
3.88 0.0001252
4.01 0.0001413
3.33 7.687E-5
3.35 7.86E-5
3.54 9.305E-5
3.61 9.905E-5
3.71 0.0001088
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6

T(K) K[x10-2W/(mK)]
3.23 1.547
3.53 1.623
3.9 1.764
4.36 1.869
4.72 2.031
5.11 2.153
5.52 2.233
6.1 2.394
6.98 2.422
8.07 2.259
10.08 2.079
12.19 1.936
T(K) K[x10-2W/(mK)]
13.19 1.848
16.3 1.623
18.23 1.409
20.38 1.252
24.92 0.932
26.91 0.838
28.16 0.789
41.13 0.437
49.19 0.326
52.05 0.334
62.16 0.273
11.18 0.311
12.38 0.409
12.51 0.448
13.71 0.53
15.65 0.667
15.51 0.698
18.25 0.765
19.02 0.905
19.82 0.802
20.43 0.878
21.71 0.826
23.83 0.789
25.59 0.777
29.53 0.687
32.06 0.648
34.44 0.609
42.24 0.515
51.33 0.442
68.35 0.336
233.33 0.352
278.78 0.369
2.23 2.218E-5
2.4 2.785E-5
2.43 2.866E-5
2.63 3.683E-5
2.68 3.911E-5
2.86 4.773E-5
2.92 5.056E-5
3.09 6.045E-5
3.16 6.503E-5
3.32 7.648E-5
3.47 8.702E-5
3.6 9.834E-5
3.77 0.0001141
3.88 0.0001252
4.01 0.0001413
3.33 7.687E-5
3.35 7.86E-5
3.54 9.305E-5
3.61 9.905E-5
3.71 0.0001088
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6

¢Æ As_K_RRR1450ÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 10.5 X 3.02 X 4.21(mm3)
±¸Á¶ : Single crystal (Trigonal direction)
¹Ðµµ : 5.48 g/cm^3
¼ººÐºÐ¼® : ¸¸Á·
ºÒ¼ø¹° : RRR1450
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2 K - 300 K
½ÇÇè¹æ¹ý : Steady state technique
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : necessary
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 2 % (300 K), 1 % (<77 K)
¢Æ As_K_RRR1450ÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Phys. Rev. B Vol. 28, p4242, (1983)


¢Æ As_K_RRR870ÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.050
ÂüÁ¶Ç¥ÁØ µî±Þ °ËÁõ ÂüÁ¶Ç¥ÁØ
T(K) K[x10-2W/(mK)]
1.86 1.108
2.17 1.241
2.19 1.191
2.3 1.224
2.53 1.376
3.17 1.527
3.25 1.645
3.4 1.628
3.88 1.813
5.04 2.014
6.02 2.099
6.39 2.132
6.85 2.148
7.37 2.148
8.01 2.148
8.91 2.132
9.56 2.148
10.64 2.181
11.84 2.217
13.18 2.267
15.58 2.418
16.52 2.484
19.04 2.652
T(K) K[x10-2W/(mK)]
20.46 2.704
23.04 2.704
25.35 2.668
27.56 2.586
31.4 2.418
34.54 2.25
38.44 2.03
42.79 1.846
47.62 1.662
53 1.527
63.28 1.26
72.09 1.092
79.31 1.023
85.22 0.957
97.09 0.872
106.8 0.789
115.92 0.754
143.6 0.688
169.74 0.638
200.3 0.605
236.76 0.586
263.51 0.57
2.4 2.785E-5
2.43 2.866E-5
2.63 3.683E-5
2.68 3.911E-5
2.86 4.773E-5
2.92 5.056E-5
3.09 6.045E-5
3.16 6.503E-5
3.32 7.648E-5
3.47 8.702E-5
3.6 9.834E-5
3.77 0.0001141
3.88 0.0001252
4.01 0.0001413
3.33 7.687E-5
3.35 7.86E-5
3.54 9.305E-5
3.61 9.905E-5
3.71 0.0001088
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ As_K_RRR870ÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 19.7 X 3.0 X 1.05(mm3)
±¸Á¶ : Single crystal (Binary direction)
¹Ðµµ : 5.48 g/cm^3
¼ººÐºÐ¼® : ¸¸Á·
ºÒ¼ø¹° : RRR870
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2 K - 300 K
½ÇÇè¹æ¹ý : Steady state technique
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : necessary
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 2 % (300 K), 1 % (<77 K)
¢Æ As_K_RRR870ÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Phys. Rev. B Vol. 28, p4242, (1983)


¢Æ As_Cp_2.18K20.33Kpoly99.999 %ÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.048
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T(K) Cp[J/(gK)]
2.18313 1.93305E-5
2.63095 3.14521E-5
2.98081 4.20099E-5
3.42863 6.35387E-5
4.22631 0.000116957
4.91903 0.000178596
5.36685 0.000235022
5.91263 0.000311058
6.40944 0.000408742
6.90624 0.000500844
7.95582 0.00080099
8.40364 0.000976134
8.85146 0.00115
9.39724 0.0014
9.89404 0.00166
10.39084 0.00195
10.88764 0.00227
11.43343 0.00273
T(K) Cp[J/(gK)]
11.83227 0.00309
12.37805 0.0036
12.92383 0.00397
13.37165 0.0047
13.86845 0.00527
14.41423 0.00595
15.01599 0.00693
15.40784 0.00748
15.91164 0.00833
16.2545 0.00903
16.90524 0.01016
17.35306 0.01105
17.89884 0.01205
18.29768 0.01317
18.94142 0.01444
19.38924 0.01558
19.83707 0.01686
20.33387 0.01796
85.22 0.957
97.09 0.872
106.8 0.789
115.92 0.754
143.6 0.688
169.74 0.638
200.3 0.605
236.76 0.586
263.51 0.57
2.4 2.785E-5
2.43 2.866E-5
2.63 3.683E-5
2.68 3.911E-5
2.86 4.773E-5
2.92 5.056E-5
3.09 6.045E-5
3.16 6.503E-5
3.32 7.648E-5
3.47 8.702E-5
3.6 9.834E-5
3.77 0.0001141
3.88 0.0001252
4.01 0.0001413
3.33 7.687E-5
3.35 7.86E-5
3.54 9.305E-5
3.61 9.905E-5
3.71 0.0001088
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ As_Cp_2.18K20.33Kpoly99.999 %ÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : polycrystal
±¸Á¶ : polycrystal1
¹Ðµµ : 5.48 g/cm^3
¼ººÐºÐ¼® : As2O3
ºÒ¼ø¹° : As 99.999 %
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2.18 K - 20.33 K
½ÇÇè¹æ¹ý : Adiabatic calorimeter
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 3.60 %
¢Æ As_Cp_2.18K20.33Kpoly99.999 %ÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] *Wu, et.al., J. Non-Cryst. Solids 13 (1973/74) 437-439.


¢Æ As_Cp_0.6K4.5Ksingle99.9999 %ÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.047
ÂüÁ¶Ç¥ÁØ µî±Þ °ËÁõ ÂüÁ¶Ç¥ÁØ
T(K) Cp[J/(gK)]
0.582 1.8E-6
0.615 1.9297E-6
0.63 1.9645E-6
0.644 2.0323E-6
0.661 2.0938E-6
0.675 2.1395E-6
0.683 2.1713E-6
0.704 2.2512E-6
0.73 2.3823E-6
0.742 2.4237E-6
0.752 2.4584E-6
0.779 2.5907E-6
0.794 2.6602E-6
0.818 2.7774E-6
0.827 2.8042E-6
0.844 2.8846E-6
0.872 3.0047E-6
0.879 3.0713E-6
0.895 3.1382E-6
0.917 3.2718E-6
0.941 3.4053E-6
0.959 3.4853E-6
0.976 3.6054E-6
1.003 3.7657E-6
1.029 3.9127E-6
1.034 3.9528E-6
1.06 4.0998E-6
1.128 4.5795E-6
1.147 4.7134E-6
1.181 4.9562E-6
1.214 5.1613E-6
1.255 5.5548E-6
T(K) Cp[J/(gK)]
1.287 5.7809E-6
1.314 6.0237E-6
1.35 6.3292E-6
1.386 6.6641E-6
1.416 6.9153E-6
1.447 7.2502E-6
1.485 7.6269E-6
1.524 7.9869E-6
1.57 8.4934E-6
1.625 9.1464E-6
1.668 9.7199E-6
1.725 1.0628E-5
1.785 1.1139E-5
1.864 1.2219E-5
1.949 1.3609E-5
2.033 1.5061E-5
2.126 1.6639E-5
2.253 1.9323E-5
2.346 2.1114E-5
2.443 2.3262E-5
2.558 2.6493E-5
2.65 2.8846E-5
2.788 3.2852E-5
2.917 3.6992E-5
3.061 4.2195E-5
3.234 4.8599E-5
3.381 5.5297E-5
3.542 6.2623E-5
3.714 7.1957E-5
3.899 8.2506E-5
4.142 9.6948E-5
4.353 0.00011336
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ As_Cp_0.6K4.5Ksingle99.9999 %ÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : crystal
±¸Á¶ : single crystal
¹Ðµµ : 5.48 g/cm^3
¼ººÐºÐ¼® : 17.5
ºÒ¼ø¹° : As 99.9999 %
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 0.6 K ~ 4.5 K
½ÇÇè¹æ¹ý : Adiabatic calorimeter
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 0.5 % / 1 % (<1.1K), 2 % (>1.1 K)
¢Æ As_Cp_0.6K4.5Ksingle99.9999 %ÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Taylor, et.al., Phys. Rev. 161, 652 (1967)


¢Æ As_Cp_0.9K3.78Kpoly99.9999 %ÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.046
ÂüÁ¶Ç¥ÁØ µî±Þ °ËÁõ ÂüÁ¶Ç¥ÁØ
T(K) Cp[J/(gK)]
0.701 2.4028E-6
0.775 2.6564E-6
0.789 2.6965E-6
0.839 2.9368E-6
0.852 2.9635E-6
0.89 3.1236E-6
0.906 3.2438E-6
0.931 3.3639E-6
0.962 3.5642E-6
1.027 3.9379E-6
1.061 4.1649E-6
1.064 4.1916E-6
1.133 4.6588E-6
1.148 4.7923E-6
1.22 5.393E-6
1.236 5.4463E-6
1.288 5.9002E-6
1.301 6.0203E-6
1.359 6.5276E-6
1.423 7.1684E-6
1.434 7.2618E-6
1.435 7.2751E-6
1.536 8.3831E-6
T(K) Cp[J/(gK)]
1.584 8.9037E-6
1.633 9.451E-6
1.718 1.0572E-5
1.731 1.0719E-5
1.769 1.1266E-5
1.906 1.3295E-5
1.914 1.3416E-5
1.963 1.415E-5
2.105 1.674E-5
2.252 1.9569E-5
2.27 1.9983E-5
2.349 2.1732E-5
2.414 2.3334E-5
2.502 2.5403E-5
2.688 3.113E-5
2.764 3.3039E-5
2.878 3.7137E-5
2.975 4.0634E-5
3.171 4.895E-5
3.279 5.2515E-5
3.571 6.6437E-5
3.8 7.9533E-5
3.984 9.2721E-5
1.949 1.3609E-5
2.033 1.5061E-5
2.126 1.6639E-5
2.253 1.9323E-5
2.346 2.1114E-5
2.443 2.3262E-5
2.558 2.6493E-5
2.65 2.8846E-5
2.788 3.2852E-5
2.917 3.6992E-5
3.061 4.2195E-5
3.234 4.8599E-5
3.381 5.5297E-5
3.542 6.2623E-5
3.714 7.1957E-5
3.899 8.2506E-5
4.142 9.6948E-5
4.353 0.00011336
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ As_Cp_0.9K3.78Kpoly99.9999 %ÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : cylinder
±¸Á¶ : crystal
¹Ðµµ : 5.48 g/cm^3
¼ººÐºÐ¼® : Pb(5ppm), Si(10 ppm)
ºÒ¼ø¹° : As 99.9999 %
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 0.7 K ~ 3.98 K
½ÇÇè¹æ¹ý : Adiabatic calorimeter
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 0.60 %
¢Æ As_Cp_0.9K3.78Kpoly99.9999 %ÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Culbert, Phys. Rev. 157, 560 (1967)


¢Æ As_Cp_57K300KpolySb0.13 %ÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.045
ÂüÁ¶Ç¥ÁØ µî±Þ °ËÁõ ÂüÁ¶Ç¥ÁØ
T(K) Cp[J/(gK)]
57.2 0.13404
61.1 0.13726
70.2 0.16133
80.9 0.20013
85.2 0.19745
91 0.20679
98.6 0.21683
115.5 0.25024
128.2 0.25832
140.6 0.26803
155.5 0.27866
T(K) Cp[J/(gK)]
174.4 0.28687
202.7 0.30424
212.7 0.30914
227.1 0.31228
242.4 0.32069
258.9 0.32203
267.2 0.32019
272.8 0.32132
285.7 0.32655
291 0.32948
1.435 7.2751E-6
1.536 8.3831E-6
1.584 8.9037E-6
1.633 9.451E-6
1.718 1.0572E-5
1.731 1.0719E-5
1.769 1.1266E-5
1.906 1.3295E-5
1.914 1.3416E-5
1.963 1.415E-5
2.105 1.674E-5
2.252 1.9569E-5
2.27 1.9983E-5
2.349 2.1732E-5
2.414 2.3334E-5
2.502 2.5403E-5
2.688 3.113E-5
2.764 3.3039E-5
2.878 3.7137E-5
2.975 4.0634E-5
3.171 4.895E-5
3.279 5.2515E-5
3.571 6.6437E-5
3.8 7.9533E-5
3.984 9.2721E-5
1.949 1.3609E-5
2.033 1.5061E-5
2.126 1.6639E-5
2.253 1.9323E-5
2.346 2.1114E-5
2.443 2.3262E-5
2.558 2.6493E-5
2.65 2.8846E-5
2.788 3.2852E-5
2.917 3.6992E-5
3.061 4.2195E-5
3.234 4.8599E-5
3.381 5.5297E-5
3.542 6.2623E-5
3.714 7.1957E-5
3.899 8.2506E-5
4.142 9.6948E-5
4.353 0.00011336
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ As_Cp_57K300KpolySb0.13 %ÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : aggregate
±¸Á¶ : crystalline aggregate
¹Ðµµ : 5.48 g/cm^3
¼ººÐºÐ¼® : As2O3/As3O6
ºÒ¼ø¹° : Sb 0.13 %
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 57 K ~ 300 K
½ÇÇè¹æ¹ý : Adiabatic calorimeter
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 0.625 (Ç¥ÁØÆíÂ÷)
¢Æ As_Cp_57K300KpolySb0.13 %ÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] J. Am. Chem. Soc, Vol. 52, No. 6, p2296-2300, (1930)


¢Æ p-type [110] CZ Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.043
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T(K) ¥á[10-6/K]
35 -0.10869
40 -0.1682
45 -0.23151
50 -0.29376
55 -0.35214
60 -0.40066
65 -0.43749
70 -0.46232
75 -0.4749
80 -0.4749
85 -0.46195
90 -0.43614
95 -0.39812
100 -0.34961
105 -0.28693
110 -0.22107
115 -0.14782
120 -0.06733
125 0.01877
130 0.10873
135 0.20119
T(K) ¥á[10-6/K]
140 0.29523
145 0.39083
150 0.48623
160 0.68358
170 0.8785
180 1.06
190 1.2355
200 1.4047
210 1.5617
220 1.7105
230 1.8509
240 1.9827
250 2.1062
260 2.2219
270 2.3298
280 2.4293
290 2.5248
295 2.5717
300 2.6123
305 2.65
3.171 4.895E-5
3.279 5.2515E-5
3.571 6.6437E-5
3.8 7.9533E-5
3.984 9.2721E-5
1.949 1.3609E-5
2.033 1.5061E-5
2.126 1.6639E-5
2.253 1.9323E-5
2.346 2.1114E-5
2.443 2.3262E-5
2.558 2.6493E-5
2.65 2.8846E-5
2.788 3.2852E-5
2.917 3.6992E-5
3.061 4.2195E-5
3.234 4.8599E-5
3.381 5.5297E-5
3.542 6.2623E-5
3.714 7.1957E-5
3.899 8.2506E-5
4.142 9.6948E-5
4.353 0.00011336
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ p-type [110] CZ Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : cylindric
±¸Á¶ : single crystal
¹Ðµµ : none
¼ººÐºÐ¼® : high purity
ºÒ¼ø¹° : none
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 35 K~ 305 K
½ÇÇè¹æ¹ý : Heterodyne interferometer
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : normal
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 4x10-9/K
¢Æ p-type [110] CZ Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] International Cryogenic Materials Conference-ICMC, Vol. 52, (2006)


¢Æ 4N [110] Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.042
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T(K) ¥á[10-6/K]
40 -0.05
50 -0.2
60 -0.41
70 -0.59
80 -0.77
90 -0.51
100 -0.31
110 -0.15
120 0.01
130 0.16
140 0.31
150 0.47
160 0.65
170 0.84
T(K) ¥á[10-6/K]
180 1.05
190 1.28
200 1.49
210 1.67
220 1.83
230 1.97
240 2.07
250 2.16
260 2.22
270 2.27
280 2.3
290 2.31
300 2.33
190 1.2355
200 1.4047
210 1.5617
220 1.7105
230 1.8509
240 1.9827
250 2.1062
260 2.2219
270 2.3298
280 2.4293
290 2.5248
295 2.5717
300 2.6123
305 2.65
3.171 4.895E-5
3.279 5.2515E-5
3.571 6.6437E-5
3.8 7.9533E-5
3.984 9.2721E-5
1.949 1.3609E-5
2.033 1.5061E-5
2.126 1.6639E-5
2.253 1.9323E-5
2.346 2.1114E-5
2.443 2.3262E-5
2.558 2.6493E-5
2.65 2.8846E-5
2.788 3.2852E-5
2.917 3.6992E-5
3.061 4.2195E-5
3.234 4.8599E-5
3.381 5.5297E-5
3.542 6.2623E-5
3.714 7.1957E-5
3.899 8.2506E-5
4.142 9.6948E-5
4.353 0.00011336
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ 4N [110] Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 6 mm cone, 2 mm~ 3 mm
±¸Á¶ : single-crystal
¹Ðµµ : none
¼ººÐºÐ¼® : none
ºÒ¼ø¹° : ~1013/cc
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 40 K~300 K
½ÇÇè¹æ¹ý : Inetrferometric technique
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : normal
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ CTE < 1.5 %
¢Æ 4N [110] Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Physical Review, Vol. 112, No. 1, 136~140, (1958)


¢Æ [111] Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.041
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T(K) ¥á[10-6/K]
308.372 2.683
310.282 2.697
312.194 2.713
T(K) ¥á[10-6/K]
314.11 2.733
316.028 2.75
90 -0.51
100 -0.31
110 -0.15
120 0.01
130 0.16
140 0.31
150 0.47
160 0.65
170 0.84
180 1.05
190 1.28
200 1.49
210 1.67
220 1.83
230 1.97
240 2.07
250 2.16
260 2.22
270 2.27
280 2.3
290 2.31
300 2.33
190 1.2355
200 1.4047
210 1.5617
220 1.7105
230 1.8509
240 1.9827
250 2.1062
260 2.2219
270 2.3298
280 2.4293
290 2.5248
295 2.5717
300 2.6123
305 2.65
3.171 4.895E-5
3.279 5.2515E-5
3.571 6.6437E-5
3.8 7.9533E-5
3.984 9.2721E-5
1.949 1.3609E-5
2.033 1.5061E-5
2.126 1.6639E-5
2.253 1.9323E-5
2.346 2.1114E-5
2.443 2.3262E-5
2.558 2.6493E-5
2.65 2.8846E-5
2.788 3.2852E-5
2.917 3.6992E-5
3.061 4.2195E-5
3.234 4.8599E-5
3.381 5.5297E-5
3.542 6.2623E-5
3.714 7.1957E-5
3.899 8.2506E-5
4.142 9.6948E-5
4.353 0.00011336
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ [111] Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 10 cm long, 2.5 cm dia.
±¸Á¶ : single-crystal[111]50
¹Ðµµ : none
¼ººÐºÐ¼® : Àοë
ºÒ¼ø¹° : none
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : (34~44) ¡É
½ÇÇè¹æ¹ý : Interferometer
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : normal
½ÇÇèÀýÂ÷ : normal
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ precision: ¡¾0.2 %
¢Æ [111] Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] J. App. Phys. Vol. 47, No. 4,1683-1685, 1976


¢Æ [111] 100 kohms-Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.040
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T(K) ¥á[10-6/K]
336 2.69
433.3 3.39
546.2 3.74
674.6 3.98
853.2 4.12
T(K) ¥á[10-6/K]
1059.5 4.27
1236.9 4.43
1364.3 4.44
1465.3 4.76
130 0.16
140 0.31
150 0.47
160 0.65
170 0.84
180 1.05
190 1.28
200 1.49
210 1.67
220 1.83
230 1.97
240 2.07
250 2.16
260 2.22
270 2.27
280 2.3
290 2.31
300 2.33
190 1.2355
200 1.4047
210 1.5617
220 1.7105
230 1.8509
240 1.9827
250 2.1062
260 2.2219
270 2.3298
280 2.4293
290 2.5248
295 2.5717
300 2.6123
305 2.65
3.171 4.895E-5
3.279 5.2515E-5
3.571 6.6437E-5
3.8 7.9533E-5
3.984 9.2721E-5
1.949 1.3609E-5
2.033 1.5061E-5
2.126 1.6639E-5
2.253 1.9323E-5
2.346 2.1114E-5
2.443 2.3262E-5
2.558 2.6493E-5
2.65 2.8846E-5
2.788 3.2852E-5
2.917 3.6992E-5
3.061 4.2195E-5
3.234 4.8599E-5
3.381 5.5297E-5
3.542 6.2623E-5
3.714 7.1957E-5
3.899 8.2506E-5
4.142 9.6948E-5
4.353 0.00011336
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ [111] 100 kohms-Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : (10x25x0.3 or 0.5)mm
±¸Á¶ : single-crystal
¹Ðµµ : none
¼ººÐºÐ¼® : none
ºÒ¼ø¹° : Àοë
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 300 K~ 1500 K
½ÇÇè¹æ¹ý : X-ray method
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : normal
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 2x10-7/K
¢Æ [111] 100 kohms-Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] J. App. Phys. Vol. 56, No. 2, 314-320, 1984


¢Æ [111] 1 kohms-Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.039
ÂüÁ¶Ç¥ÁØ µî±Þ °ËÁõ ÂüÁ¶Ç¥ÁØ
T(K) ¥á[10-6/K]
300 2.633
350 2.999
400 3.268
450 3.465
500 3.61
550 3.719
600 3.805
650 3.877
700 3.942
T(K) ¥á[10-6/K]
750 4.003
800 4.063
850 4.122
900 4.18
1000 4.29
1100 4.383
1200 4.464
1300 4.56
210 1.67
220 1.83
230 1.97
240 2.07
250 2.16
260 2.22
270 2.27
280 2.3
290 2.31
300 2.33
190 1.2355
200 1.4047
210 1.5617
220 1.7105
230 1.8509
240 1.9827
250 2.1062
260 2.2219
270 2.3298
280 2.4293
290 2.5248
295 2.5717
300 2.6123
305 2.65
3.171 4.895E-5
3.279 5.2515E-5
3.571 6.6437E-5
3.8 7.9533E-5
3.984 9.2721E-5
1.949 1.3609E-5
2.033 1.5061E-5
2.126 1.6639E-5
2.253 1.9323E-5
2.346 2.1114E-5
2.443 2.3262E-5
2.558 2.6493E-5
2.65 2.8846E-5
2.788 3.2852E-5
2.917 3.6992E-5
3.061 4.2195E-5
3.234 4.8599E-5
3.381 5.5297E-5
3.542 6.2623E-5
3.714 7.1957E-5
3.899 8.2506E-5
4.142 9.6948E-5
4.353 0.00011336
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ [111] 1 kohms-Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : (8.1¡¿10¡¿14) mm
±¸Á¶ : single crystal
¹Ðµµ : none
¼ººÐºÐ¼® : Àοë
ºÒ¼ø¹° : none
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 300 K~ 1300 K
½ÇÇè¹æ¹ý : Optical heterodyne interferometry
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : normal
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 2.1x10-8/K
¢Æ [111] 1 kohms-Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Int. J. Thermophys., Vol. 9, No. 1, 1101, 1988


¢Æ FZ[100][110] Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.038
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T(K) ¥á[10-6/K]
293 2.57
300 2.63
350 2.97
400 3.24
450 3.44
500 3.6
550 3.73
600 3.84
T(K) ¥á[10-6/K]
650 3.93
700 4
750 4.07
800 4.14
850 4.19
900 4.24
950 4.29
1000 4.33
1300 4.56
210 1.67
220 1.83
230 1.97
240 2.07
250 2.16
260 2.22
270 2.27
280 2.3
290 2.31
300 2.33
190 1.2355
200 1.4047
210 1.5617
220 1.7105
230 1.8509
240 1.9827
250 2.1062
260 2.2219
270 2.3298
280 2.4293
290 2.5248
295 2.5717
300 2.6123
305 2.65
3.171 4.895E-5
3.279 5.2515E-5
3.571 6.6437E-5
3.8 7.9533E-5
3.984 9.2721E-5
1.949 1.3609E-5
2.033 1.5061E-5
2.126 1.6639E-5
2.253 1.9323E-5
2.346 2.1114E-5
2.443 2.3262E-5
2.558 2.6493E-5
2.65 2.8846E-5
2.788 3.2852E-5
2.917 3.6992E-5
3.061 4.2195E-5
3.234 4.8599E-5
3.381 5.5297E-5
3.542 6.2623E-5
3.714 7.1957E-5
3.899 8.2506E-5
4.142 9.6948E-5
4.353 0.00011336
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ FZ[100][110] Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : (10¡¿7¡¿20) mm
±¸Á¶ : single crystal
¹Ðµµ : none
¼ººÐºÐ¼® : Àοë
ºÒ¼ø¹° : none
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 293 K~ 1000 K
½ÇÇè¹æ¹ý : Interferometric dilatometer
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : normal
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 4.82x10-8/K, ¡¾0.252 %
¢Æ FZ[100][110] Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Int. J. Thermophys., Vol. 25, No. 1, 221-236, 2004


¢Æ FZ Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.037
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T(K) ¥á[10-6/K]
700 4.0033158
720 4.03512726528
740 4.06322480288
760 4.08833061888
780 4.11109429728
800 4.1320928
820 4.15183046688
840 4.17073901568
860 4.18917754208
880 4.20743251968
900 4.2257178
T(K) ¥á[10-6/K]
920 4.24417461248
940 4.26287156448
960 4.28180464128
980 4.30089720608
1000 4.32
1020 4.33889114208
1040 4.35727612928
1060 4.37478783648
1080 4.39098651648
1100 4.4053598
250 2.16
260 2.22
270 2.27
280 2.3
290 2.31
300 2.33
190 1.2355
200 1.4047
210 1.5617
220 1.7105
230 1.8509
240 1.9827
250 2.1062
260 2.2219
270 2.3298
280 2.4293
290 2.5248
295 2.5717
300 2.6123
305 2.65
3.171 4.895E-5
3.279 5.2515E-5
3.571 6.6437E-5
3.8 7.9533E-5
3.984 9.2721E-5
1.949 1.3609E-5
2.033 1.5061E-5
2.126 1.6639E-5
2.253 1.9323E-5
2.346 2.1114E-5
2.443 2.3262E-5
2.558 2.6493E-5
2.65 2.8846E-5
2.788 3.2852E-5
2.917 3.6992E-5
3.061 4.2195E-5
3.234 4.8599E-5
3.381 5.5297E-5
3.542 6.2623E-5
3.714 7.1957E-5
3.899 8.2506E-5
4.142 9.6948E-5
4.353 0.00011336
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ FZ Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : (10x7¡¿20) mm
±¸Á¶ : single crystal
¹Ðµµ : none
¼ººÐºÐ¼® : Àοë
ºÒ¼ø¹° : none
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 700 K~ 1100 K
½ÇÇè¹æ¹ý : Interferometricdilatometer
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : normal
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 1.1x10-8/K, ¡¾0.26 %
¢Æ FZ Single Crystalline Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Int. J. Thermophys., Vol. 23, No. 2, 543-554, 2002


¢Æ Pure Poly- Silicon_300_1000_Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.035
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T(K) ¥á[10-6/K]
300 2.614
320 2.773
340 2.915
360 3.041
380 3.153
400 3.253
420 3.342
440 3.421
460 3.492
480 3.556
500 3.614
520 3.666
540 3.725
560 3.76
T(K) ¥á[10-6/K]
580 3.802
600 3.842
620 3.879
640 3.915
660 3.95
680 3.984
700 4.016
720 4.047
740 4.076
760 4.104
780 4.129
800 4.151
820 4.17
840 4.185
200 1.4047
210 1.5617
220 1.7105
230 1.8509
240 1.9827
250 2.1062
260 2.2219
270 2.3298
280 2.4293
290 2.5248
295 2.5717
300 2.6123
305 2.65
3.171 4.895E-5
3.279 5.2515E-5
3.571 6.6437E-5
3.8 7.9533E-5
3.984 9.2721E-5
1.949 1.3609E-5
2.033 1.5061E-5
2.126 1.6639E-5
2.253 1.9323E-5
2.346 2.1114E-5
2.443 2.3262E-5
2.558 2.6493E-5
2.65 2.8846E-5
2.788 3.2852E-5
2.917 3.6992E-5
3.061 4.2195E-5
3.234 4.8599E-5
3.381 5.5297E-5
3.542 6.2623E-5
3.714 7.1957E-5
3.899 8.2506E-5
4.142 9.6948E-5
4.353 0.00011336
3.83 0.0001188
4.01 0.0001389
0.2413 9.00953E-7
0.242 9.10808E-7
0.2529 8.6728E-7
0.2536 8.56603E-7
0.2704 8.14553E-7
0.292 7.67904E-7
0.2979 7.50657E-7
0.298 7.42198E-7
0.3059 7.45976E-7
0.306 7.52792E-7
0.3098 7.47947E-7
0.3471 7.1066E-7
0.3487 7.13863E-7
0.3568 7.00148E-7
0.3597 7.01626E-7
0.3605 6.93003E-7
0.3685 7.03022E-7
0.3865 7.1066E-7
0.3911 6.96945E-7
0.3912 7.07622E-7
0.3997 7.01051E-7
0.4029 7.14274E-7
0.4125 7.24951E-7
0.4336 7.51232E-7
0.4342 7.49836E-7
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ Pure Poly- Silicon_300_1000_Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 5 mm ±æÀÌ
±¸Á¶ : poly-crystal
¹Ðµµ : none
¼ººÐºÐ¼® : none
ºÒ¼ø¹° : Àοë
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 300 K~ 850 K
½ÇÇè¹æ¹ý : Interferometer
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : none
½ÇÇèÀýÂ÷ : normal
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 1x10-8/K
¢Æ Pure Poly- Silicon_300_1000_Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] J. Phys. D:Appl. Phys., 14,(1981) L163-166


¢Æ Poly- Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.034
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T(K) ¥á[10-6/K]
13.536 0.0122
14.092 0.0135
15.504 0.0124
16.433 0.0092
17.499 0.00036
17.993 -0.00025
19.286 -0.00169
19.99 -0.00272
21.994 -0.00742
24.003 -0.01476
26.038 -0.02435
28.024 -0.03722
29.493 -0.04913
30.489 -0.05744
33.33 -0.08457
37.997 -0.13838
43.159 -0.2047
48.506 -0.2745
53.597 -0.3355
55.389 -0.355
60.155 -0.4005
63.494 -0.4275
66.754 -0.4474
69.675 -0.4613
72.813 -0.4708
76.227 -0.4755
80.192 -0.4713
81.099 -0.4676
81.994 -0.4656
83.012 -0.466
84.026 -0.4622
85.004 -0.4585
86.002 -0.4505
87.019 -0.4448
88.019 -0.44
89.002 -0.4344
90.01 -0.4296
92.261 -0.4156
93.987 -0.3995
95.999 -0.3805
98.05 -0.36
99.54 -0.3438
101.25 -0.3275
105.06 -0.275
110.1 -0.2108
115.05 -0.1357
T(K) ¥á[10-6/K]
120.03 -0.0566
125 0.0291
129.98 0.1191
134.77 0.2084
139.39 0.2926
144.63 0.3935
149.96 0.4963
154.9 0.5913
160.06 0.6905
165.63 0.7963
169.98 0.8768
174.91 0.9682
179.97 1.0623
185.21 1.1531
189.94 1.235
194.98 1.3232
199.99 1.4043
204.96 1.4857
209.96 1.5651
214.99 1.622
220.01 1.717
225.01 1.785
230.01 1.8543
235.01 1.9239
240.01 1.9856
245 2.045
249.99 2.1094
255 2.1674
260 2.2248
265 2.2737
270 2.3292
275 2.3824
280 2.4327
285.01 2.4795
290.01 2.527
295 2.572
299.99 2.6184
304.99 2.6581
310.01 2.6953
315 2.7361
320 2.7708
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ Poly- Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 10 cm long, 3.8 cm dia.
±¸Á¶ : poly-crystal
¹Ðµµ : none
¼ººÐºÐ¼® : Àοë
ºÒ¼ø¹° : none
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 6 K~ 340 K
½ÇÇè¹æ¹ý : Linear capacitance dilatometer
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : normal
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 0.10 %
¢Æ Poly- Silicon Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] J. App. Phys. Vol. 48, No. 3, 865-868, 1977


¢Æ Polycrystalline Silicon Film Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.033
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T(K) ¥á[10-6/K]
295 2.9
T(K) ¥á[10-6/K]
14.092 0.0135
15.504 0.0124
16.433 0.0092
17.499 0.00036
17.993 -0.00025
19.286 -0.00169
19.99 -0.00272
21.994 -0.00742
24.003 -0.01476
26.038 -0.02435
28.024 -0.03722
29.493 -0.04913
30.489 -0.05744
33.33 -0.08457
37.997 -0.13838
43.159 -0.2047
48.506 -0.2745
53.597 -0.3355
55.389 -0.355
60.155 -0.4005
63.494 -0.4275
66.754 -0.4474
69.675 -0.4613
72.813 -0.4708
76.227 -0.4755
80.192 -0.4713
81.099 -0.4676
81.994 -0.4656
83.012 -0.466
84.026 -0.4622
85.004 -0.4585
86.002 -0.4505
87.019 -0.4448
88.019 -0.44
89.002 -0.4344
90.01 -0.4296
92.261 -0.4156
93.987 -0.3995
95.999 -0.3805
98.05 -0.36
99.54 -0.3438
101.25 -0.3275
105.06 -0.275
110.1 -0.2108
115.05 -0.1357
120.03 -0.0566
125 0.0291
129.98 0.1191
134.77 0.2084
139.39 0.2926
144.63 0.3935
149.96 0.4963
154.9 0.5913
160.06 0.6905
165.63 0.7963
169.98 0.8768
174.91 0.9682
179.97 1.0623
185.21 1.1531
189.94 1.235
194.98 1.3232
199.99 1.4043
204.96 1.4857
209.96 1.5651
214.99 1.622
220.01 1.717
225.01 1.785
230.01 1.8543
235.01 1.9239
240.01 1.9856
245 2.045
249.99 2.1094
255 2.1674
260 2.2248
265 2.2737
270 2.3292
275 2.3824
280 2.4327
285.01 2.4795
290.01 2.527
295 2.572
299.99 2.6184
304.99 2.6581
310.01 2.6953
315 2.7361
320 2.7708
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ Polycrystalline Silicon Film Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 1000x10-9 mµÎ²²
±¸Á¶ : poly-crystal thin film
¹Ðµµ : none
¼ººÐºÐ¼® : Àοë
ºÒ¼ø¹° : none
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : RT~473 K
½ÇÇè¹æ¹ý : Optical laser beam technique
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : normal
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ Ç¥ÁØÆíÂ÷:0.24x10-6/K
¢Æ Polycrystalline Silicon Film Thermal ExpansionÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Sensors and Actuators, 75, 222~229, 1999


¢Æ 8N Single Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.032
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T/K ¥ñ[Kg/m3]
1698.6 2.558
1722.2 2.554
1751.8 2.545
1781.7 2.536
T/K ¥ñ[Kg/m3]
1805.1 2.532
1830.2 2.523
1853.7 2.519
19.99 -0.00272
21.994 -0.00742
24.003 -0.01476
26.038 -0.02435
28.024 -0.03722
29.493 -0.04913
30.489 -0.05744
33.33 -0.08457
37.997 -0.13838
43.159 -0.2047
48.506 -0.2745
53.597 -0.3355
55.389 -0.355
60.155 -0.4005
63.494 -0.4275
66.754 -0.4474
69.675 -0.4613
72.813 -0.4708
76.227 -0.4755
80.192 -0.4713
81.099 -0.4676
81.994 -0.4656
83.012 -0.466
84.026 -0.4622
85.004 -0.4585
86.002 -0.4505
87.019 -0.4448
88.019 -0.44
89.002 -0.4344
90.01 -0.4296
92.261 -0.4156
93.987 -0.3995
95.999 -0.3805
98.05 -0.36
99.54 -0.3438
101.25 -0.3275
105.06 -0.275
110.1 -0.2108
115.05 -0.1357
120.03 -0.0566
125 0.0291
129.98 0.1191
134.77 0.2084
139.39 0.2926
144.63 0.3935
149.96 0.4963
154.9 0.5913
160.06 0.6905
165.63 0.7963
169.98 0.8768
174.91 0.9682
179.97 1.0623
185.21 1.1531
189.94 1.235
194.98 1.3232
199.99 1.4043
204.96 1.4857
209.96 1.5651
214.99 1.622
220.01 1.717
225.01 1.785
230.01 1.8543
235.01 1.9239
240.01 1.9856
245 2.045
249.99 2.1094
255 2.1674
260 2.2248
265 2.2737
270 2.3292
275 2.3824
280 2.4327
285.01 2.4795
290.01 2.527
295 2.572
299.99 2.6184
304.99 2.6581
310.01 2.6953
315 2.7361
320 2.7708
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ 8N Single Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 12 mm dia.À̳»
±¸Á¶ : Single crystal
¹Ðµµ : 2.558(kg/m3(1699K)
¼ººÐºÐ¼® : 8N purity Si
ºÒ¼ø¹° : purity
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 1699 K~1854 K
½ÇÇè¹æ¹ý : Pycnometer
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : normal
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 0.50 %
¢Æ 8N Single Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Sato, Int. J. Thermophys., Vol. 21, No. 6, p1463~1471, (2000)


¢Æ CZ(10^13 Oxgen) Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.031
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T/K ¥ñ[Kg/m3]
1693 2.52
1723 2.51
T/K ¥ñ[Kg/m3]
1753 2.5
1773 2.49
1805.1 2.532
1830.2 2.523
1853.7 2.519
19.99 -0.00272
21.994 -0.00742
24.003 -0.01476
26.038 -0.02435
28.024 -0.03722
29.493 -0.04913
30.489 -0.05744
33.33 -0.08457
37.997 -0.13838
43.159 -0.2047
48.506 -0.2745
53.597 -0.3355
55.389 -0.355
60.155 -0.4005
63.494 -0.4275
66.754 -0.4474
69.675 -0.4613
72.813 -0.4708
76.227 -0.4755
80.192 -0.4713
81.099 -0.4676
81.994 -0.4656
83.012 -0.466
84.026 -0.4622
85.004 -0.4585
86.002 -0.4505
87.019 -0.4448
88.019 -0.44
89.002 -0.4344
90.01 -0.4296
92.261 -0.4156
93.987 -0.3995
95.999 -0.3805
98.05 -0.36
99.54 -0.3438
101.25 -0.3275
105.06 -0.275
110.1 -0.2108
115.05 -0.1357
120.03 -0.0566
125 0.0291
129.98 0.1191
134.77 0.2084
139.39 0.2926
144.63 0.3935
149.96 0.4963
154.9 0.5913
160.06 0.6905
165.63 0.7963
169.98 0.8768
174.91 0.9682
179.97 1.0623
185.21 1.1531
189.94 1.235
194.98 1.3232
199.99 1.4043
204.96 1.4857
209.96 1.5651
214.99 1.622
220.01 1.717
225.01 1.785
230.01 1.8543
235.01 1.9239
240.01 1.9856
245 2.045
249.99 2.1094
255 2.1674
260 2.2248
265 2.2737
270 2.3292
275 2.3824
280 2.4327
285.01 2.4795
290.01 2.527
295 2.572
299.99 2.6184
304.99 2.6581
310.01 2.6953
315 2.7361
320 2.7708
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ CZ(10^13 Oxgen) Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 24mµÎ²²
±¸Á¶ : single crystal
¹Ðµµ : 2.52 g/cm3 (1693K)
¼ººÐºÐ¼® : Si3N4
ºÒ¼ø¹° : 99.50 %
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 1693 K~1773 K
½ÇÇè¹æ¹ý : Image analysis method
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : normal
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 0.60 %
¢Æ CZ(10^13 Oxgen) Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Niu, Jan. Assoc. Crystal Growth, Vol. 24, No. 4, p369~378, (1997)


¢Æ B-doped Poly-Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.030
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T/K ¥ñ[Kg/m3]
1691.97487 2.56566
1693.16331 2.56753
1695.77788 2.58332
1695.77788 2.58093
1698.39244 2.57601
1704.76247 2.57075
1712.8914 2.57059
T/K ¥ñ[Kg/m3]
1755.24736 2.56124
1802.49969 2.55615
1840.19697 2.54987
1863.72806 2.54072
1862.82484 2.54631
1878.51224 2.54208
1915.92429 2.53663
33.33 -0.08457
37.997 -0.13838
43.159 -0.2047
48.506 -0.2745
53.597 -0.3355
55.389 -0.355
60.155 -0.4005
63.494 -0.4275
66.754 -0.4474
69.675 -0.4613
72.813 -0.4708
76.227 -0.4755
80.192 -0.4713
81.099 -0.4676
81.994 -0.4656
83.012 -0.466
84.026 -0.4622
85.004 -0.4585
86.002 -0.4505
87.019 -0.4448
88.019 -0.44
89.002 -0.4344
90.01 -0.4296
92.261 -0.4156
93.987 -0.3995
95.999 -0.3805
98.05 -0.36
99.54 -0.3438
101.25 -0.3275
105.06 -0.275
110.1 -0.2108
115.05 -0.1357
120.03 -0.0566
125 0.0291
129.98 0.1191
134.77 0.2084
139.39 0.2926
144.63 0.3935
149.96 0.4963
154.9 0.5913
160.06 0.6905
165.63 0.7963
169.98 0.8768
174.91 0.9682
179.97 1.0623
185.21 1.1531
189.94 1.235
194.98 1.3232
199.99 1.4043
204.96 1.4857
209.96 1.5651
214.99 1.622
220.01 1.717
225.01 1.785
230.01 1.8543
235.01 1.9239
240.01 1.9856
245 2.045
249.99 2.1094
255 2.1674
260 2.2248
265 2.2737
270 2.3292
275 2.3824
280 2.4327
285.01 2.4795
290.01 2.527
295 2.572
299.99 2.6184
304.99 2.6581
310.01 2.6953
315 2.7361
320 2.7708
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ B-doped Poly-Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 10 mmµÎ²²
±¸Á¶ : poly-crystal
¹Ðµµ : 2.56 g/cm3
¼ººÐºÐ¼® : pure-,doped-Si
ºÒ¼ø¹° : 0.1 %(B,Ga)
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : (1400 ~ 1550) ¡É
½ÇÇè¹æ¹ý : Archimedean method
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : normal
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 0.20 %
¢Æ B-doped Poly-Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Kawanjshi, Jan. J. Appl. Phys., Vol. 34, pL1509~1512, (1995)


¢Æ Single Crystalline Solid Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.024
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T/K ¥ñ[Kg/m3]
275 2.311
T/K ¥ñ[Kg/m3]
1693.16331 2.56753
1695.77788 2.58332
1695.77788 2.58093
1698.39244 2.57601
1704.76247 2.57075
1712.8914 2.57059
1755.24736 2.56124
1802.49969 2.55615
1840.19697 2.54987
1863.72806 2.54072
1862.82484 2.54631
1878.51224 2.54208
1915.92429 2.53663
33.33 -0.08457
37.997 -0.13838
43.159 -0.2047
48.506 -0.2745
53.597 -0.3355
55.389 -0.355
60.155 -0.4005
63.494 -0.4275
66.754 -0.4474
69.675 -0.4613
72.813 -0.4708
76.227 -0.4755
80.192 -0.4713
81.099 -0.4676
81.994 -0.4656
83.012 -0.466
84.026 -0.4622
85.004 -0.4585
86.002 -0.4505
87.019 -0.4448
88.019 -0.44
89.002 -0.4344
90.01 -0.4296
92.261 -0.4156
93.987 -0.3995
95.999 -0.3805
98.05 -0.36
99.54 -0.3438
101.25 -0.3275
105.06 -0.275
110.1 -0.2108
115.05 -0.1357
120.03 -0.0566
125 0.0291
129.98 0.1191
134.77 0.2084
139.39 0.2926
144.63 0.3935
149.96 0.4963
154.9 0.5913
160.06 0.6905
165.63 0.7963
169.98 0.8768
174.91 0.9682
179.97 1.0623
185.21 1.1531
189.94 1.235
194.98 1.3232
199.99 1.4043
204.96 1.4857
209.96 1.5651
214.99 1.622
220.01 1.717
225.01 1.785
230.01 1.8543
235.01 1.9239
240.01 1.9856
245 2.045
249.99 2.1094
255 2.1674
260 2.2248
265 2.2737
270 2.3292
275 2.3824
280 2.4327
285.01 2.4795
290.01 2.527
295 2.572
299.99 2.6184
304.99 2.6581
310.01 2.6953
315 2.7361
320 2.7708
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ Single Crystalline Solid Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 50mm dia
±¸Á¶ : Singlecrystal
¹Ðµµ : 2.311 kg/m3
¼ººÐºÐ¼® : Àοë
ºÒ¼ø¹° : Àοë
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 600K~1900K
½ÇÇè¹æ¹ý : electrostatic levitation
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : normal
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 2 %
¢Æ Single Crystalline Solid Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Appl. Phys. Lett., 70(4), 27 Jan., (1997)


¢Æ Solid Poly-Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.023
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T/K ¥ñ[Kg/m3]
293 2.329
T/K ¥ñ[Kg/m3]
1683 2.525
1695.77788 2.58332
1695.77788 2.58093
1698.39244 2.57601
1704.76247 2.57075
1712.8914 2.57059
1755.24736 2.56124
1802.49969 2.55615
1840.19697 2.54987
1863.72806 2.54072
1862.82484 2.54631
1878.51224 2.54208
1915.92429 2.53663
33.33 -0.08457
37.997 -0.13838
43.159 -0.2047
48.506 -0.2745
53.597 -0.3355
55.389 -0.355
60.155 -0.4005
63.494 -0.4275
66.754 -0.4474
69.675 -0.4613
72.813 -0.4708
76.227 -0.4755
80.192 -0.4713
81.099 -0.4676
81.994 -0.4656
83.012 -0.466
84.026 -0.4622
85.004 -0.4585
86.002 -0.4505
87.019 -0.4448
88.019 -0.44
89.002 -0.4344
90.01 -0.4296
92.261 -0.4156
93.987 -0.3995
95.999 -0.3805
98.05 -0.36
99.54 -0.3438
101.25 -0.3275
105.06 -0.275
110.1 -0.2108
115.05 -0.1357
120.03 -0.0566
125 0.0291
129.98 0.1191
134.77 0.2084
139.39 0.2926
144.63 0.3935
149.96 0.4963
154.9 0.5913
160.06 0.6905
165.63 0.7963
169.98 0.8768
174.91 0.9682
179.97 1.0623
185.21 1.1531
189.94 1.235
194.98 1.3232
199.99 1.4043
204.96 1.4857
209.96 1.5651
214.99 1.622
220.01 1.717
225.01 1.785
230.01 1.8543
235.01 1.9239
240.01 1.9856
245 2.045
249.99 2.1094
255 2.1674
260 2.2248
265 2.2737
270 2.3292
275 2.3824
280 2.4327
285.01 2.4795
290.01 2.527
295 2.572
299.99 2.6184
304.99 2.6581
310.01 2.6953
315 2.7361
320 2.7708
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ Solid Poly-Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : mm dia
±¸Á¶ : Singlecrystal
¹Ðµµ : 2.329 kg/m3
¼ººÐºÐ¼® : Àοë
ºÒ¼ø¹° : Àοë
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 293 K, 1683 K
½ÇÇè¹æ¹ý : None
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : necessary
½ÇÇèÁ¶°Ç : necessary
ÃøÁ¤ºÒÈ®µµ -
¢Æ Solid Poly-Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Emsley, Oxford press, "The Elements", 1990.


¢Æ 28 99.896 % Silicon Thermal conductivityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.022
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T[K] ¥ë[W/(mK)]
78.38077 2229.19196
79.17545 2181.19198
80.8111 2000.86236
82.25596 1929.07322
83.72666 1861.30626
85.87673 1731.48391
87.86615 1694.20081
88.32249 1657.7205
89.43715 1576.03372
94.57822 1373.42643
100.01481 1196.86535
114.40326 889.34754
117.91836 821.54902
121.57461 764.24763
124.6966 715.93464
128.21298 675.91008
135.58298 593.15401
139.06471 576.33533
142.28628 543.69228
145.58248 513.29698
153.15549 457.15364
155.51178 447.31
158.29226 434.62668
161.12245 419.03267
164.00324 407.15114
166.11831 395.60651
169.08843 378.75317
172.11165 370.59768
176.09878 362.6178
178.32121 347.16983
T[K] ¥ë[W/(mK)]
180.62093 337.32595
183.34978 334.974
185.25921 322.95543
191.47273 311.61024
194.89617 298.33525
198.38082 291.91136
200.39214 277.52697
203.97506 273.45777
206.0431 269.65779
212.4318 254.38464
214.58558 250.65476
217.88697 241.84944
221.78269 234.99188
228.09903 226.56058
232.74774 216.90882
238.13956 213.89464
241.14498 209.28896
248.01275 197.43505
251.82842 193.18379
255.00659 187.70613
259.56599 183.66435
267.61425 175.84002
272.39906 173.39654
276.58991 169.66288
280.84523 162.43503
286.56892 161.30248
290.26465 161.30248
293.20756 154.43079
295.45445 152.16647
185.21 1.1531
189.94 1.235
194.98 1.3232
199.99 1.4043
204.96 1.4857
209.96 1.5651
214.99 1.622
220.01 1.717
225.01 1.785
230.01 1.8543
235.01 1.9239
240.01 1.9856
245 2.045
249.99 2.1094
255 2.1674
260 2.2248
265 2.2737
270 2.3292
275 2.3824
280 2.4327
285.01 2.4795
290.01 2.527
295 2.572
299.99 2.6184
304.99 2.6581
310.01 2.6953
315 2.7361
320 2.7708
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ 28 99.896 % Silicon Thermal conductivityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : rod(5.6 mm dia 60 mm length)
±¸Á¶ : single crystal
¹Ðµµ : Àοë
¼ººÐºÐ¼® : 28Si,29Si,30Si
ºÒ¼ø¹° : 99.86 %
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 80K~300K
½ÇÇè¹æ¹ý : steady-state method
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : normal
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 4 %(ÃßÁ¤¿ÀÂ÷)
¢Æ 28 99.896 % Silicon Thermal conductivityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Inorganic Materials Vol. 38, No. 11, 2002, pp. 1100-1102.


¢Æ 28 92.23 %-29-4.67 %-30-3.1 % Silicon Thermal conductivityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.021
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T[K] ¥ë[W/(mK)]
2.22696 187.98655
2.47162 329.34202
2.54957 339.06965
2.85806 397.02752
2.98107 576.989
3.20387 675.61491
3.41292 695.57024
3.63158 768.40317
3.94653 814.46548
4.2462 1165.64429
4.42404 1600.64411
4.66074 1717.51749
4.91009 1717.51749
5.44953 2161.24799
5.44953 2496.02016
5.67778 2605.42192
5.86333 3523.32935
6.37183 4372.88917
6.84807 5743.83399
7.21445 5743.83399
8.00706 6924.29146
7.60043 7996.84772
8.78875 7875.26658
8.25957 9363.76526
8.43544 10360.10195
9.55095 10202.59076
9.16701 12299.40004
9.75432 11133.60405
10.60026 11444.90479
10.06194 12838.48866
11.76486 12662.68186
10.60026 15265.08251
10.82597 16155.38591
11.76486 16889.33957
12.6582 16889.33957
11.51957 18657.81672
12.01536 20643.07231
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
T[K] ¥ë[W/(mK)]
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ 28 92.23 %-29-4.67 %-30-3.1 % Silicon Thermal conductivityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 350mm thick
±¸Á¶ : single crystal
¹Ðµµ : Àοë
¼ººÐºÐ¼® : 28Si,29Si,30Si
ºÒ¼ø¹° : 99.80 %
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2K~300K
½ÇÇè¹æ¹ý : steady-state heat-flow method
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : normal
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 25 %
¢Æ 28 92.23 %-29-4.67 %-30-3.1 % Silicon Thermal conductivityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Solid State Communications 115, 2000, 243-247.


¢Æ 28 99.7 %Film Silicon Thermal conductivityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.020
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T[K] ¥ë[W/(mK)]
150.06382 3959.32983
190.03254 1348.03549
221.06397 717.65901
261.96421 629.03175
295.91844 395.42906
334.63755 288.52071
T[K] ¥ë[W/(mK)]
374.73478 334.88013
411.94508 252.88986
483.40375 190.60918
526.22566 181.37316
562.34133 121.90082
4.66074 1717.51749
4.91009 1717.51749
5.44953 2161.24799
5.44953 2496.02016
5.67778 2605.42192
5.86333 3523.32935
6.37183 4372.88917
6.84807 5743.83399
7.21445 5743.83399
8.00706 6924.29146
7.60043 7996.84772
8.78875 7875.26658
8.25957 9363.76526
8.43544 10360.10195
9.55095 10202.59076
9.16701 12299.40004
9.75432 11133.60405
10.60026 11444.90479
10.06194 12838.48866
11.76486 12662.68186
10.60026 15265.08251
10.82597 16155.38591
11.76486 16889.33957
12.6582 16889.33957
11.51957 18657.81672
12.01536 20643.07231
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ 28 99.7 %Film Silicon Thermal conductivityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 11.7mm thick
±¸Á¶ : single crystal
¹Ðµµ : Àοë
¼ººÐºÐ¼® : 28Si 99.7 %
ºÒ¼ø¹° : none
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 100K~375K
½ÇÇè¹æ¹ý : optical pump-and-probe method
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : normal
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 10 %(ÃßÁ¤¿ÀÂ÷)
¢Æ 28 99.7 %Film Silicon Thermal conductivityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Appl. Phys. Lett., 71,(15) 13 October (1997)


¢Æ SiO2 Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.019
ÂüÁ¶Ç¥ÁØ µî±Þ °ËÁõ ÂüÁ¶Ç¥ÁØ
T[K] ¥ë[W/(mK)]
10 1739.1
20 639.2
30 276.9
40 168.5
50 106.5
60 91.9
70 69.3
80 55.9
90 43.6
T[K] ¥ë[W/(mK)]
100 35.5
200 16.5
273 11.6
300 10.4
400 7.7
500 6
600 5.1
700 4.5
800 4.2
6.84807 5743.83399
7.21445 5743.83399
8.00706 6924.29146
7.60043 7996.84772
8.78875 7875.26658
8.25957 9363.76526
8.43544 10360.10195
9.55095 10202.59076
9.16701 12299.40004
9.75432 11133.60405
10.60026 11444.90479
10.06194 12838.48866
11.76486 12662.68186
10.60026 15265.08251
10.82597 16155.38591
11.76486 16889.33957
12.6582 16889.33957
11.51957 18657.81672
12.01536 20643.07231
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ SiO2 Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 5¡¿5¡¿40 (mm)
±¸Á¶ : Single Crystal
¹Ðµµ : 2.6 g/cm3
¼ººÐºÐ¼® : Composition analysis given
ºÒ¼ø¹° : Satisfactory
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 0.1 K¡­100 K
½ÇÇè¹æ¹ý : Steady-state method
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : Good
½Ã·áÁ¦Á¶¹ý : Fair
½ÇÇèÀýÂ÷ : Good
½ÇÇèÁ¶°Ç : Good
ÃøÁ¤ºÒÈ®µµ Not given
¢Æ SiO2 Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Zeller, R. C. and Pohl, R. O., Phys. Rev. B. Vol.4, 2029-2041 (1971)
  • [±âŸ¹®¼­] TPRC handbook


¢Æ SiO2 Crystal Specific Heat CapacityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.018
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T[K] Cp[Jg-1K-1]
0.1 7.54E-9
0.2 1.09E-8
0.3 2.39E-8
0.4 3.36E-8
0.5 6.97E-8
0.6 1.16E-7
0.7 1.98E-7
0.8 2.42E-7
0.9 3.38E-7
1 4.35E-7
2 3.4E-6
3 1.69E-5
4 5.67E-5
5 0.000138
6 0.000294
7 0.000459
8 0.000717
9 0.0011
10 0.0019
T[K] Cp[Jg-1K-1]
20 0.0119
30 0.0372
40 0.0648
50 0.0901
60 0.132
70 0.17
80 0.201
90 0.239
100 0.265
200 0.552
273 0.71
316.7 0.781
414.7 0.903
506.7 0.997
610.4 1.084
703 1.146
808.8 1.275
844.4 1.417
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ SiO2 Crystal Specific Heat CapacityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 5¡¿5¡¿40 (mm)
±¸Á¶ : ¥á-quartz (crystal)
¹Ðµµ : 2.6 g/cm3
¼ººÐºÐ¼® : Satisfactory
ºÒ¼ø¹° : Satisfactory
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 0.1K¡­2 K
½ÇÇè¹æ¹ý : Transient heating technique
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : Good
½Ã·áÁ¦Á¶¹ý : Good
½ÇÇèÀýÂ÷ : Good
½ÇÇèÁ¶°Ç : Fair
ÃøÁ¤ºÒÈ®µµ 20 % below 0.1 K & negligible above 0.2 K
¢Æ SiO2 Crystal Specific Heat CapacityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Zeller, R. C. and Pohl, R. O., Phys. Rev. B. Vol.4, 2029-2041 (1971)
  • [±âŸ¹®¼­] TPRC handbook


¢Æ Natural Ge Crystal Thermal Expansion CoefficientÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.017
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T[K] ¥á[10-6K-1]
306 5.62
332 5.8
357 5.97
382 6.17
407 6.27
432 6.39
458 6.51
T[K] ¥á[10-6K-1]
483 6.61
510 6.64
535 6.73
560 6.75
581 6.75
609 6.81
5 0.000138
6 0.000294
7 0.000459
8 0.000717
9 0.0011
10 0.0019
20 0.0119
30 0.0372
40 0.0648
50 0.0901
60 0.132
70 0.17
80 0.201
90 0.239
100 0.265
200 0.552
273 0.71
316.7 0.781
414.7 0.903
506.7 0.997
610.4 1.084
703 1.146
808.8 1.275
844.4 1.417
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ Natural Ge Crystal Thermal Expansion CoefficientÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 10 (dia.) ¡¿ 30.77 (mm)
±¸Á¶ : Single Crystal
¹Ðµµ : Not given
¼ººÐºÐ¼® : Not given
ºÒ¼ø¹° : Not given
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 298 K¡­633 K
½ÇÇè¹æ¹ý : Interferometric dilatometer
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : Good
½Ã·áÁ¦Á¶¹ý : Good
½ÇÇèÀýÂ÷ : Good
½ÇÇèÁ¶°Ç : Fair
ÃøÁ¤ºÒÈ®µµ resolution = 1 ppm
¢Æ Natural Ge Crystal Thermal Expansion CoefficientÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] J. Appl. Phys., Vol.43, 3114-3117 (1972)
  • [±âŸ¹®¼­] TPRC handbook


¢Æ Natural Ge Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.016
ÂüÁ¶Ç¥ÁØ µî±Þ °ËÁõ ÂüÁ¶Ç¥ÁØ
T[K] ¥ë[W/(mK)]
2 82.5
3 207
4 372.5
5 556.1
6 726.6
7 852.5
8 1017.1
9 1107.9
10 1182.4
11 1271.7
12 1311.7
13 1342.5
14 1347.2
15 1343
16 1328.8
17 1306.5
18 1287
T[K] ¥ë[W/(mK)]
19 1264.8
20 1223.6
25 1102.5
30 940.7
35 815.2
40 712.4
45 640
50 580.2
60 454.9
70 360.6
80 313.5
90 262.7
100 222.6
150 132.8
200 90.1
250 73.4
273 66.7
703 1.146
808.8 1.275
844.4 1.417
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ Natural Ge Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 2.46 ¡¿ 2.50 ¡¿ 29.4 (mm)
±¸Á¶ : Single Crystal [100]
¹Ðµµ : Not given
¼ººÐºÐ¼® : Satisfactory
ºÒ¼ø¹° : Not given
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2 K¡­300 K
½ÇÇè¹æ¹ý : A steady-state heat flow method
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : Good
½Ã·áÁ¦Á¶¹ý : Good
½ÇÇèÀýÂ÷ : Good
½ÇÇèÁ¶°Ç : Fair
ÃøÁ¤ºÒÈ®µµ <2 %
¢Æ Natural Ge Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Phys. Rev. B Vol.56, 9431 (1997)
  • [±âŸ¹®¼­] TPRC handbook


¢Æ Natural Ge Crystal Specific Heat CapacityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.015
ÂüÁ¶Ç¥ÁØ µî±Þ °ËÁõ ÂüÁ¶Ç¥ÁØ
T[K] ¥ñ[J/(gK)]
3 1.35E-5
4 3.32E-5
5 6.75E-5
6 0.000126
7 0.000202
8 0.000332
9 0.000516
10 0.000968
20 0.0128
30 0.0353
40 0.0795
50 0.0837
60 0.1084
70 0.1294
80 0.153
90 0.1712
T[K] ¥ñ[J/(gK)]
100 0.1884
150 0.2516
200 0.2872
250 0.3043
300 0.3152
363 0.3466
406 0.3144
453 0.3608
502 0.37
600 0.3956
716 0.3309
810 0.335
920 0.3358
1015 0.3391
1118 0.3415
1200 0.3423
250 73.4
273 66.7
703 1.146
808.8 1.275
844.4 1.417
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ Natural Ge Crystal Specific Heat CapacityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 2.5¡¿2.5¡¿10 mm
±¸Á¶ : Crystal
¹Ðµµ : Satisfactory
¼ººÐºÐ¼® : Satisfactory
ºÒ¼ø¹° : Satisfactory
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2.8 K¡­100 K
½ÇÇè¹æ¹ý : Quasiadiabatic vacuum calorimetry
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : Good
½Ã·áÁ¦Á¶¹ý : Good
½ÇÇèÀýÂ÷ : Good
½ÇÇèÁ¶°Ç : Good
ÃøÁ¤ºÒÈ®µµ <¡¾2 %
¢Æ Natural Ge Crystal Specific Heat CapacityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Schnelle, W. and Gmelin, E., J. Phys.:Condens. Matter Vol.13, 6087-6094 (2001)
  • [±âŸ¹®¼­] TPRC handbook


¢Æ Ge Film Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.012
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T[K] ¥ë[W/(mK)]
173 46.4
228 41.9
274 34.9
335 30.7
T[K] ¥ë[W/(mK)]
408 26
464 20
492 18.3
10 0.000968
20 0.0128
30 0.0353
40 0.0795
50 0.0837
60 0.1084
70 0.1294
80 0.153
90 0.1712
100 0.1884
150 0.2516
200 0.2872
250 0.3043
300 0.3152
363 0.3466
406 0.3144
453 0.3608
502 0.37
600 0.3956
716 0.3309
810 0.335
920 0.3358
1015 0.3391
1118 0.3415
1200 0.3423
250 73.4
273 66.7
703 1.146
808.8 1.275
844.4 1.417
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ Ge Film Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 900 nm in thickness
±¸Á¶ : Crystal
¹Ðµµ : Not given
¼ººÐºÐ¼® : Not given
ºÒ¼ø¹° : Not given
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 170 K¡­500 K
½ÇÇè¹æ¹ý : Steady state technique
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : Good
½Ã·áÁ¦Á¶¹ý : Good
½ÇÇèÀýÂ÷ : Good
½ÇÇèÁ¶°Ç : Fair
ÃøÁ¤ºÒÈ®µµ Not given
¢Æ Ge Film Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Phys. Rev. B Vol.10, 3412-3418 (1974)
  • [±âŸ¹®¼­] TPRC handbook


¢Æ 76Ge Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.008
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T[K] ¥ë[W/(mK)]
2.1 108.4
3.2 262.7
4 422.4
5 690.3
6.2 1127.9
7 1380.4
7.9 1700.3
9.5 2165.3
11.6 2484.5
20 2781.2
30.8 1889.1
40.3 1380.4
50.3 937.6
T[K] ¥ë[W/(mK)]
59.5 652.7
71.9 472.9
80.3 393.1
92.2 321.5
105.2 262.7
126.4 201.5
150.5 159.6
174.1 136.9
201.6 116.6
228.3 104.2
247.3 99.3
268.2 93.7
292.8 88.7
716 0.3309
810 0.335
920 0.3358
1015 0.3391
1118 0.3415
1200 0.3423
250 73.4
273 66.7
703 1.146
808.8 1.275
844.4 1.417
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ 76Ge Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 1.27 ¡¿ 2.54 ¡¿ 35.0 (mm)
±¸Á¶ : Single Crystal
¹Ðµµ : Not given
¼ººÐºÐ¼® : Satisfactory
ºÒ¼ø¹° : Not given
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2 K¡­300 K
½ÇÇè¹æ¹ý : Steady-state heat flow method
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : Good
½Ã·áÁ¦Á¶¹ý : Fair
½ÇÇèÀýÂ÷ : Good
½ÇÇèÁ¶°Ç : Good
ÃøÁ¤ºÒÈ®µµ <5 %
¢Æ 76Ge Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Phys. Rev. B Vol.56, 9431 (1997)
  • [±âŸ¹®¼­] TPRC handbook


¢Æ 74Ge Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.007
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T[K] ¥ë[W/(mK)]
2.2 80.5
2.9 134.3
3.2 180.7
3.9 323.6
4.4 446.7
5.1 652.9
6.9 1212.8
8.5 1733.7
9.2 2389.4
9.9 2566.3
14.1 3179.9
16.7 3668.5
18.3 3622.2
22.8 3621
25.3 3215.5
T[K] ¥ë[W/(mK)]
30.4 2822.9
34.5 2362.9
49.3 1302.7
63.4 800
69.1 630.5
73.2 565.9
80 468.5
86.4 391.5
94.2 323.6
112 252.2
151 158.6
216.1 104.6
226.7 98.5
291.3 79.5
1015 0.3391
1118 0.3415
1200 0.3423
250 73.4
273 66.7
703 1.146
808.8 1.275
844.4 1.417
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ 74Ge Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 1.57 ¡¿ 1.3 ¡¿ 12.0 (mm)
±¸Á¶ : Single Crystal [100]
¹Ðµµ : Not given
¼ººÐºÐ¼® : Satisfactory
ºÒ¼ø¹° : Not given
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2 K¡­300 K
½ÇÇè¹æ¹ý : Heat flow parallel to the [100]
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : Good
½Ã·áÁ¦Á¶¹ý : Good
½ÇÇèÀýÂ÷ : Fair
½ÇÇèÁ¶°Ç : Good
ÃøÁ¤ºÒÈ®µµ Not given
¢Æ 74Ge Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Phys. Rev. Vol.110, 773-775 (1958)
  • [±âŸ¹®¼­] TPRC handbook


¢Æ 70Ge(99.99) Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.006
ÂüÁ¶Ç¥ÁØ µî±Þ °ËÁõ ÂüÁ¶Ç¥ÁØ
T[K] ¥ë[W/(mK)]
2 100.1
3 277.9
4 606.9
5 1192.3
6 2029.3
7 3045.5
8 4353.1
9 5297.3
10 6567.8
11 7743.7
12 8687.6
13 9281.3
14 9884.1
15 10255.5
16.2 10446.4
17.7 10305.2
18.6 10179.1
T[K] ¥ë[W/(mK)]
20 9438.8
25 7467.8
30 5517.8
36 3797.8
41 2745.7
45 2177.9
50 1658.4
60 1070.6
70 731.7
80 545.8
90 422.8
100 321.5
150 155.9
200 108.3
250 83.4
274 71.8
289 68.1
703 1.146
808.8 1.275
844.4 1.417
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ 70Ge(99.99) Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 2.20 ¡¿ 2.50 ¡¿ 44.5 (mm)
±¸Á¶ : Single Crystal
¹Ðµµ : Not given
¼ººÐºÐ¼® : Satisfactory
ºÒ¼ø¹° : Satisfactory
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2 K¡­300 K
½ÇÇè¹æ¹ý : Steady-state heat flow method
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : Good
½Ã·áÁ¦Á¶¹ý : Fair
½ÇÇèÀýÂ÷ : Good
½ÇÇèÁ¶°Ç : Good
ÃøÁ¤ºÒÈ®µµ <5 %
¢Æ 70Ge(99.99) Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Phys. Rev. B Vol.56, 9431 (1997)
  • [±âŸ¹®¼­] TPRC handbook


¢Æ 70Ge(96.3) Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.005
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T[K] ¥ë[W/(mK)]
2 111.2
3 321.2
4 630.1
5 1054.3
6 1589.4
7 2088.7
8 2577.4
9.1 3180.4
10 3282.1
20.2 3217
31.1 2134
40.1 1540.2
52.6 1077.2
T[K] ¥ë[W/(mK)]
59.6 810.4
72.3 573.3
80.5 484.3
91.8 384.1
100 318
126 231.9
150.5 176.4
178.4 138.6
206.7 113.4
220 105.4
246.2 92
257.8 89.1
272 82.9
80 545.8
90 422.8
100 321.5
150 155.9
200 108.3
250 83.4
274 71.8
289 68.1
703 1.146
808.8 1.275
844.4 1.417
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ 70Ge(96.3) Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 2.5 ¡¿ 2.5 ¡¿ 28.0 (mm)
±¸Á¶ : Single Crystal
¹Ðµµ : Not given
¼ººÐºÐ¼® : Satisfactory
ºÒ¼ø¹° : Not given
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2 K¡­300 K
½ÇÇè¹æ¹ý : Steady-state heat flow method
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : Good
½Ã·áÁ¦Á¶¹ý : Fair
½ÇÇèÀýÂ÷ : Good
½ÇÇèÁ¶°Ç : Good
ÃøÁ¤ºÒÈ®µµ <5 %
¢Æ 70Ge(96.3) Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Phys. Rev. B Vol.56, 9431 (1997)
  • [±âŸ¹®¼­] TPRC handbook


¢Æ 70Ge(95.6) Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.004
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T[K] ¥ë[W/(mK)]
2.3 18.1
3 64.9
4 138.4
4.9 233.6
6.1 346.8
7.1 539.5
8.6 859.4
10.1 1149.2
13 1450.3
16.8 1985.3
20.9 2204.4
27.2 2232.1
32.2 2080.6
40.4 1666.7
51.3 1122.5
60.6 820
T[K] ¥ë[W/(mK)]
71.6 621
83.9 458.6
102.8 323.7
122.5 242.1
143.5 191.8
158.1 162.8
173.9 145
181.9 136.9
200.4 120.4
220.8 108.5
240.9 101.1
265.4 91.1
274.9 86.9
284.9 84.9
292.4 83.9
250 83.4
274 71.8
289 68.1
703 1.146
808.8 1.275
844.4 1.417
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ 70Ge(95.6) Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 2.02 ¡¿ 2.00 ¡¿ 23.0 (mm)
±¸Á¶ : Single Crystal
¹Ðµµ : Not given
¼ººÐºÐ¼® : Satisfactory
ºÒ¼ø¹° : Satisfactory
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2 K¡­300 K
½ÇÇè¹æ¹ý : Steady-state heat flow method
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : Good
½Ã·áÁ¦Á¶¹ý : Fair
½ÇÇèÀýÂ÷ : Good
½ÇÇèÁ¶°Ç : Good
ÃøÁ¤ºÒÈ®µµ <5 %
¢Æ 70Ge(95.6) Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Phys. Rev. B Vol.56, 9431 (1997)
  • [±âŸ¹®¼­] TPRC handbook


¢Æ 70Ge Crystal Specific Heat CapacityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.003
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T[K] ¥ñ[J/(gK)]
3.5 2.59E-5
4.3 4.71E-5
5.2 8.66E-5
6.4 0.000177
7.1 0.000245
8.2 0.000414
9 0.000584
10 0.000918
11 0.00134
11.8 0.00178
13.1 0.00259
14.1 0.00354
15 0.00455
16 0.00589
17 0.00732
18.2 0.00941
19.5 0.0117
T[K] ¥ñ[J/(gK)]
20 0.0128
25.1 0.0244
30.2 0.0387
34.8 0.0519
39.8 0.0653
45.3 0.0773
49.9 0.0886
55 0.1
60 0.117
65.2 0.129
70.6 0.14
75.4 0.152
80.4 0.158
84.8 0.165
90.4 0.172
94.9 0.188
97.4 0.192
703 1.146
808.8 1.275
844.4 1.417
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ 70Ge Crystal Specific Heat CapacityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : Not given
±¸Á¶ : Crystal
¹Ðµµ : Not given
¼ººÐºÐ¼® : Satisfactory
ºÒ¼ø¹° : Not given
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2.8 K¡­100 K
½ÇÇè¹æ¹ý : Quasiadiabatic vacuum calorimeter
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : Good
½Ã·áÁ¦Á¶¹ý : Fair
½ÇÇèÀýÂ÷ : Good
½ÇÇèÁ¶°Ç : Fair
ÃøÁ¤ºÒÈ®µµ <2 %
¢Æ 70Ge Crystal Specific Heat CapacityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Schnelle, W. and Gmelin, E., J. Phys.:Condens. Matter Vol.13, 6087-6094 (2001)
  • [±âŸ¹®¼­] TPRC handbook


¢Æ 70-76 Ge Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.002
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T[K] ¥ë[W/(mK)]
2.5 109.6
3.5 189.3
4.8 301.4
6 395.9
8.8 541.7
10.4 637.2
12 704.8
14 741.3
20.8 691.5
26 650.4
30 581.5
34.5 504.7
40 451.9
47.3 372.8
51.2 350.6
59.5 298.1
T[K] ¥ë[W/(mK)]
71 233.9
78.9 205.2
85.4 193
90 179.7
99.2 161
108.3 143.9
118.2 130.1
130.3 117.6
143.6 107.3
156.8 97
175.7 88.6
192 82.5
211.4 77.6
233 72.3
258.9 67.3
275.4 64
94.9 0.188
97.4 0.192
703 1.146
808.8 1.275
844.4 1.417
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ 70-76 Ge Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 2.02 ¡¿ 2.00 ¡¿ 23.0 (mm)
±¸Á¶ : Single Crystal
¹Ðµµ : Not given
¼ººÐºÐ¼® : Satisfactory
ºÒ¼ø¹° : Satisfactory
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2 K¡­300 K
½ÇÇè¹æ¹ý : Steady-state heat flow method
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : Good
½Ã·áÁ¦Á¶¹ý : Well
½ÇÇèÀýÂ÷ : Good
½ÇÇèÁ¶°Ç : Good
ÃøÁ¤ºÒÈ®µµ <5 %
¢Æ 70-76 Ge Crystal Thermal ConductivityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Schnelle, W. and Gmelin, E., J. Phys.:Condens. Matter Vol.13, 6087-6094 (2001)
  • [±âŸ¹®¼­] TPRC handbook


¢Æ 70-76 Ge Crystal Specific Heat CapacityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.001
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T[K] ¥ñ[J/(gK)]
3.3 2.42E-5
3.9 3.25E-5
5.2 8.35E-5
6.5 0.000184
7.2 0.000254
8.1 0.000376
9.3 0.000641
10.2 0.00095
10.9 0.00125
12.1 0.00197
13 0.00254
14.1 0.00358
15.1 0.00475
15.9 0.0058
17 0.00753
17.8 0.00895
18.8 0.0107
T[K] ¥ñ[J/(gK)]
20.2 0.0134
25.1 0.0246
29.7 0.0369
35 0.0513
40.3 0.0646
45.1 0.0753
49.9 0.0871
54.7 0.0978
60.4 0.112
65.2 0.124
70 0.134
74.8 0.145
80.3 0.155
85.3 0.164
90.5 0.172
95 0.188
97.6 0.193
703 1.146
808.8 1.275
844.4 1.417
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ 70-76 Ge Crystal Specific Heat CapacityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : Not given
±¸Á¶ : Crystal
¹Ðµµ : Not given
¼ººÐºÐ¼® : Satisfactory
ºÒ¼ø¹° : Not given
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : 2.8 K¡­100 K
½ÇÇè¹æ¹ý : Quasiadiabatic vacuum calorimeter
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : Good
½Ã·áÁ¦Á¶¹ý : Fair
½ÇÇèÀýÂ÷ : Good
½ÇÇèÁ¶°Ç : Fair
ÃøÁ¤ºÒÈ®µµ <2 %
¢Æ 70-76 Ge Crystal Specific Heat CapacityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Schnelle, W. and Gmelin, E., J. Phys.:Condens. Matter Vol.13, 6087-6094 (2001)
  • [±âŸ¹®¼­] TPRC handbook


¢Æ Ga(4x10^18)-doped Liquid Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.073
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T/K ¥ñ[Kg/m3]
1127.34016 2.71973
1143.02367 2.59865
1180.74885 2.55898
1203.53232 2.4475
1226.95161 2.49365
1234.68739 2.54784
1261.39173 2.69743
1266.58425 2.51595
1265.31261 2.4602
1287.46026 2.64636
1312.787 2.66243
1325.18545 2.55406
T/K ¥ñ[Kg/m3]
1345.31968 2.62406
1383.04486 2.54291
1391.52243 2.52061
1394.17167 2.57013
1415.57753 2.40913
1427.34016 2.43635
1470.25786 2.39953
1552.91416 2.49365
1606.95867 2.49831
1649.24055 2.47602
1691.52243 2.36453
49.9 0.0871
54.7 0.0978
60.4 0.112
65.2 0.124
70 0.134
74.8 0.145
80.3 0.155
85.3 0.164
90.5 0.172
95 0.188
97.6 0.193
703 1.146
808.8 1.275
844.4 1.417
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ Ga(4x10^18)-doped Liquid Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : sphery10mmdia.
±¸Á¶ : single crystal
¹Ðµµ : 2.52 g/cm3 (1683K)
¼ººÐºÐ¼® : doped(Sb,B,Ga)
ºÒ¼ø¹° : 2x1016, 4x1018 (atoms/cm3) Ga
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : (1100~1730) ¡É
½ÇÇè¹æ¹ý : Electro Magenetic Levitation
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : normal
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 5 %
¢Æ Ga(4x10^18)-doped Liquid Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Langen et al., J. Crystal Growth, 186, p550~556, (1998)
  • [±âŸ¹®¼­] TPRC handbook


¢Æ B(4x10^18)-doped Liquid Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.072
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T/K ¥ñ[Kg/m3]
1128.95872 2.5479
1147.19655 2.66249
1192.05176 2.56819
1202.03327 2.64757
1208.81084 2.63295
1257.60937 2.53685
1271.28774 2.5664
1275.8472 2.58311
1290.38817 2.63653
1322.30437 2.60161
1335.98275 2.60698
1339.80283 2.54252
1349.78435 2.50194
T/K ¥ñ[Kg/m3]
1355.08318 2.57386
1368.02218 2.51119
1376.40173 2.5094
1377.88047 2.48702
1386.99938 2.5094
1405.36044 2.5094
1406.83919 2.48344
1415.9581 2.48702
1419.03882 2.47986
1424.33765 2.5094
1433.45656 2.51119
1437.27665 2.49448
1439.61799 2.43002
65.2 0.124
70 0.134
74.8 0.145
80.3 0.155
85.3 0.164
90.5 0.172
95 0.188
97.6 0.193
703 1.146
808.8 1.275
844.4 1.417
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ B(4x10^18)-doped Liquid Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : sphery10mmdia.
±¸Á¶ : single crystal
¹Ðµµ : 2.52 g/cm3 (1683K)
¼ººÐºÐ¼® : doped(Sb,B,Ga)
ºÒ¼ø¹° : 2x10^16, 4x10^18 (atoms/cm3) Sb
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : (1100~1730) ¡É
½ÇÇè¹æ¹ý : Electro Magenetic Levitation
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : normal
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 5 %
¢Æ B(4x10^18)-doped Liquid Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Langen et al., J. Crystal Growth, 186, p550~556, (1998)
  • [±âŸ¹®¼­] TPRC handbook


¢Æ Sb(2x10^16)-doped Liquid Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.071
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T/K ¥ñ[Kg/m3]
1164.09117 2.59436
1184.48909 2.53563
1190.05215 2.54685
1215.43365 2.53563
1217.5198 2.55155
1234.4408 2.5419
1269.55766 2.54842
1284.27661 2.55938
1299.80684 2.5372
1334.9237 2.51501
1334.22832 2.52623
1347.6724 2.55469
1379.31234 2.50405
T/K ¥ñ[Kg/m3]
1389.16361 2.5325
1392.64053 2.54346
1399.71026 2.51971
1405.27332 2.50561
1408.86614 2.55469
1429.26405 2.48656
1434.82712 2.51188
1440.50608 2.51501
1489.76241 2.49282
1494.63009 2.44845
1514.33263 2.43252
1519.20031 2.46437
1439.61799 2.43002
65.2 0.124
70 0.134
74.8 0.145
80.3 0.155
85.3 0.164
90.5 0.172
95 0.188
97.6 0.193
703 1.146
808.8 1.275
844.4 1.417
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ Sb(2x10^16)-doped Liquid Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : sphery10mmdia.
±¸Á¶ : single crystal
¹Ðµµ : 2.52 g/cm3 (1683K)
¼ººÐºÐ¼® : doped(Sb,B,Ga)
ºÒ¼ø¹° : 2x10^16, 4x10^18 (atoms/cm3) Sb
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : (1100~1730) ¡É
½ÇÇè¹æ¹ý : Electro Magenetic Levitation
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : normal
½Ã·áÁ¦Á¶¹ý : good
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 5 %
¢Æ Sb(2x10^16)-doped Liquid Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Langen et al., J. Crystal Growth, 186, p550~556, (1998)
  • [±âŸ¹®¼­] TPRC handbook


¢Æ 1.0 %Ga-doped Liquid Poly-Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.070
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T/K ¥ñ[Kg/m3]
1688.57694 2.60047
1690.85398 2.60103
1693.3018 2.60309
1697.6851 2.599
1701.18605 2.59844
1703.80465 2.59785
T/K ¥ñ[Kg/m3]
1711.88814 2.59886
1717.83691 2.59712
1730.10446 2.59551
1762.86537 2.58985
1796.87865 2.58432
1347.6724 2.55469
1379.31234 2.50405
1389.16361 2.5325
1392.64053 2.54346
1399.71026 2.51971
1405.27332 2.50561
1408.86614 2.55469
1429.26405 2.48656
1434.82712 2.51188
1440.50608 2.51501
1489.76241 2.49282
1494.63009 2.44845
1514.33263 2.43252
1519.20031 2.46437
1439.61799 2.43002
65.2 0.124
70 0.134
74.8 0.145
80.3 0.155
85.3 0.164
90.5 0.172
95 0.188
97.6 0.193
703 1.146
808.8 1.275
844.4 1.417
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7
0.5292 8.55782E-7
0.5327 8.77957E-7
0.5376 8.90276E-7
0.5556 9.19842E-7
0.5614 9.42017E-7
0.5821 9.90473E-7
0.5843 9.84724E-7
0.6139 1.034E-6
0.6269 1.12106E-6
0.6297 1.10627E-6
0.6676 1.18265E-6
0.6788 1.18758E-6
0.7015 1.31078E-6
0.737 1.42329E-6
0.7395 1.44136E-6
0.7698 1.45286E-6
0.7758 1.53827E-6
0.7848 1.49228E-6
¢Æ 1.0 %Ga-doped Liquid Poly-Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ ±âº»Á¤º¸  
Á¦Ç°±Ô°Ý »ùÇÃÇü»ó : 10 mmµÎ²²
±¸Á¶ : poly-crystal
¹Ðµµ : 2.56 g/cm3
¼ººÐºÐ¼® : pure-,doped-Si
ºÒ¼ø¹° : 1.0at %Ga
ÃøÁ¤¹æ¹ý ÃøÁ¤¿Âµµ¿µ¿ª : (1400 ~ 1550) ¡É
½ÇÇè¹æ¹ý : Archimedean method
ÀçÇö¼º »ùÇð¡°ø¹æ¹ý : good
½Ã·áÁ¦Á¶¹ý : normal
½ÇÇèÀýÂ÷ : good
½ÇÇèÁ¶°Ç : good
ÃøÁ¤ºÒÈ®µµ 0.20 %
¢Æ 1.0 %Ga-doped Liquid Poly-Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ ¹®¼­ÀÚ·á  
  • [±âŸ¹®¼­] Kawanjshi, Jan. J. Appl. Phys., Vol. 34, pL1509~1512, (1995)
  • [±âŸ¹®¼­] TPRC handbook


¢Æ 0.5at %Ga-doped Liquid Poly-Silicon DensityÀÇ ÂüÁ¶Ç¥ÁØ  
ÂüÁ¶Ç¥ÁØ ¹øÈ£ KSRD.01.2008.001.069
ÂüÁ¶Ç¥ÁØ µî±Þ À¯È¿ ÂüÁ¶Ç¥ÁØ
T/K ¥ñ[Kg/m3]
1691.71168 2.57713
1694.66791 2.58221
1697.65256 2.58469
1703.59343 2.58134
1712.00731 2.58148
<
T/K ¥ñ[Kg/m3]
1723.91748 2.58018
1755.41265 2.57626
1777.98229 2.57231
1796.20287 2.57058
1762.86537 2.58985
1796.87865 2.58432
1347.6724 2.55469
1379.31234 2.50405
1389.16361 2.5325
1392.64053 2.54346
1399.71026 2.51971
1405.27332 2.50561
1408.86614 2.55469
1429.26405 2.48656
1434.82712 2.51188
1440.50608 2.51501
1489.76241 2.49282
1494.63009 2.44845
1514.33263 2.43252
1519.20031 2.46437
1439.61799 2.43002
65.2 0.124
70 0.134
74.8 0.145
80.3 0.155
85.3 0.164
90.5 0.172
95 0.188
97.6 0.193
703 1.146
808.8 1.275
844.4 1.417
13.75598 22492.32152
14.33212 23156.66705
14.6373 20329.22261
15.09891 17361.57335
15.90672 20643.07231
17.28623 22804.60158
17.6543 25976.32856
16.57294 28740.29888
19.59388 29543.891
20.6193 29139.32493
22.40751 27915.76359
24.8693 26336.98006
24.8693 24171.6349
26.7577 22804.60158
28.18927 20329.22261
29.36992 16404.79845
39.70971 13797.03115
49.40502 9363.76526
58.3459 6443.22945
64.75605 5502.65019
68.22057 4372.88917
80.56652 2967.7912
82.28202 2569.74398
82.28202 2322.61029
88.52995 2014.17971
93.2664 1795.54585
97.1727 1554.72296
103.39835 1346.19982
113.61854 1101.40707
120.89784 926.32334
128.64351 814.46548
134.18022 791.09914
142.77687 675.61491
153.61837 593.12188
144.20895 675.61491
163.46038 544.35723
173.93294 492.76044
183.23854 471.34674
191.12498 426.67024
194.97825 380.35632
212.12283 369.44421
225.7131 333.91456
232.83134 324.8321
240.17406 310.716
253.02363 285.16989
263.62107 276.9886
280.82195 261.7241
292.58367 246.92222
305.17624 229.76741
311.67432 210.87665
325 2.8036
330 2.844
335 2.8761
339.86 2.9074
0.4436 7.52382E-7
0.4452 7.38995E-7
0.4616 8.11268E-7
0.4713 7.8548E-7
0.4772 7.9747E-7
0.4815 8.1094E-7
0.4911 8.15867E-7
0.5055 8.31143E-7
0.5179 8.45926E-7