Si3N4-Thermal conductivity[09-03-00015]
| 참조표준명 |
Si3N4-Thermal conductivity[09-03-00015] |
| 참조표준 번호 |
KSRD.03.2009.003.001.016 |
| DOI |
10.20925/KSRD.03.2009.003.001.016 |
| 참조표준 등급 |
유효 참조표준 |
| 재료규격 |
시료형상 : d:10mm, t:2.5mm
구조 :
밀도 : 3.25~3.29 g/cm2
성분분석 : Si,N
불순물 : 0.99 |
| 측정방법 |
측정온도영역 : 293K~1273K
실험방법 : absolute stationary |
| 재현성 |
시료가공방법 : hot-pressing
시료제조법 : 34MPa, 2073K, 2h
실험절차 : sintered at 773K in vaccum
시험조건 : fair |
| 측정불확도 |
5%(B형평가에 의함) |
Si3N4-Thermal conductivity[09-03-00015] 참고문헌
- NanoStructured Materials, Vol.5, Nos.7/8 p809-818(1995)
|
Si3N4-Thermal conductivity[09-03-00015] 참조표준
※ monolithic Si3N4
| T(K) |
monolithic Si3N4 |
| 301.45 |
36.95 |
| 477.16 |
36.44 |
| 675.01 |
34.11 |
|
| T(K) |
monolithic Si3N4 |
| 875.39 |
30.42 |
| 1070.99 |
28.75 |
| 1273.61 |
26.25 |
|
※ Si3N4/10vol% SiC
| T(K) |
Si3N4/10vol% SiC |
| 299.60 |
17.37 |
| 474.96 |
19.02 |
|
| T(K) |
Si3N4/10vol% SiC |
| 677.25 |
16.84 |
| 874.21 |
14.99 |
| 1073.70 |
13.91 |
| 1273.18 |
12.99 |
|
※ Si3N4/34vol% SiC
| T(K) |
Si3N4/34vol% SiC |
| 302.41 |
20.68 |
| 474.96 |
21.76 |
|
| T(K) |
Si3N4/34vol% SiC |
| 674.44 |
19.38 |
| 871.41 |
17.75 |
| 1073.70 |
16.28 |
| 1273.18 |
14.27 |
|
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